SSS5N80A
Abstract: MOSFET 800V 3A
Contextual Info: SSS5N80A Advanced Power MOSFET FEATURES b vdss <r Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max @ VM = 800V ^D S (o n ) = 2.2 Q < CO II
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Contextual Info: SSS5N80A A d v a n c e d Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.824 £1 (Typ.)
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IRF 640 mosfet
Abstract: SSS5N80A MOSFET 150 N IRF
Contextual Info: SSS5N80A A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 ^A Max. @ VDS = 800V ■ Low RDS(0N) : 1.824 Q (Typ.) 2.2 £2 < ■ II Improved Gate Charge Extended Safe Operating Area
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sss5n80a0040s73dd40574g4g575+2irf 640 mosfetmosfet 150 n irf
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AS3A
Abstract: SSS5N80A
Contextual Info: SSS5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 2.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
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sss5n80ao-220fas3a |
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SSS5N80A
Contextual Info: Advanced SSS5N80A Power MOSFET FEATURES D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 3 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7ka1m0880 application notess8550 d 331dual cc baw62ka2s0680ss8550 sot-23mpsa92(ksp92) equivalentdiode 1n4148 ll-34
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230assd2104irfm014ssp80n06irfu210airfi530asss7n60airfu*230asss7n60a 951ssp2n60airf640a
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