AS3A Search Results
AS3A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AS3A | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 122.41KB | 1 |
AS3A Price and Stock
YAGEO Corporation ELH478M080AS3AACapacitor: electrolytic; SNAP-IN; 4.7mF; 80VDC; Ø30x35mm; ±20% |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELH478M080AS3AA | 400 | 27 |
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KEMET Corporation ELG159M025AS3AAKPLP1.50PF 25.0V - Bulk (Alt: ELG159M025AS3AAKPLP) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELG159M025AS3AAKPLP | Bulk | 31 Weeks | 2,000 |
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KEMET Corporation ELH187M450AS3AAKPLP180 450V - Bulk (Alt: ELH187M450AS3AAKPLP) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELH187M450AS3AAKPLP | Bulk | 24 Weeks | 2,080 |
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KEMET Corporation ELG108M160AS3AAKPLP1000 160V - Bulk (Alt: ELG108M160AS3AAKPLP) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELG108M160AS3AAKPLP | Bulk | 31 Weeks | 2,000 |
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KEMET Corporation ELG187M450AS3AAKPLP180 450V - Bulk (Alt: ELG187M450AS3AAKPLP) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELG187M450AS3AAKPLP | Bulk | 31 Weeks | 2,080 |
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AS3A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IB M 1 1 D 1 3 2 5 B IB M 1 1 D 2 3 2 5 B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Une Memory Modules • Performance: -6 0 -7 0 ! t RAc ! RA S A ccess Tim e 60ns 70ns ; tcAc I C A S A ccess Tim e 15ns 18ns I aa ; Access Tim e From Address |
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72-pin104ns124nst00bl4b+4 | |
TK 69 TSOP
Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
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m5m4v16169rt-1016mcdram1024k-word16-bit+10 | |
AS3A
Abstract: K802
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lmv951as3ak802 | |
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Contextual Info: MITSUBISHI LSIs M5M4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V4169TP is a 4 M - b it Cached DRAW which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1024-w o rd by 1 6 - bit static |
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m5m4v4169tp-15256k-word16-bit1024-word+5 | |
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Contextual Info: LMV951 www.ti.com SNOSAI3C – OCTOBER 2006 – REVISED APRIL 2013 LMV951 1V, 2.7 MHz, Rail-to-Rail Input and Output Amplifier with Shutdown Option Check for Samples: LMV951 FEATURES DESCRIPTION • • • • • The LMV951 amplifier is capable of operating at |
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lmv951 | |
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Contextual Info: LM V951 LMV951 1V, 2.7 MHz, Rail-to-Rail Input and Output Amplifier with Shutdown Option Texa s In s t r u m e n t s Literature Number: SNOSAI3B Sem iconductor LMV951 1V, 2.7 M Hz, R ail-to-R ail Input and O u tp u t A m p lifie r w ith S hutdow n O ption |
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lmv951 | |
"Vibration Sensor"
Abstract: AS0B 018H 10MW dual slope adc
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ht46r73d-312khz768khz15-bit+6 | |
QorIQ Debug and Performance Monitoring
Abstract: mesa Toshiba MeP secure toshiba mep architecture
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p3041p3041rmqoriq debug and performance monitoringmesa+2 | |
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Contextual Info: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice. |
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m5m4v16169rt-1016mcdram1024k-wqrd16-bit+3 | |
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Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P - 1 0 ,- 1 2 ,- 1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1048576-word by 1 6 - bit |
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cdram16m1024k-word16-bit1024-word+3 | |
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Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024 |
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rev22m5m4v16169rt-101024k16-bit+4 | |
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Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.1 M5M4V4169TP-15,-20 4MCDRAM:4M(256K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice |
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m5m4v4169tp-15256k-word16-bit1024-word+3 | |
sram 3.3 16bitContextual Info: MITSUBISHI LSIs M5M4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V4169TP is a 4 M - b it Cached DRAM which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1 0 2 4 -word by 1 6 - bit static |
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m5m4v4169tp-15256k-word16-bit1024-word+4 | |
M5M4V4169Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 1.1 M5M4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM PIN CONFIGURATION (TOP VIEW) Preliminary This document is a preliminary Target Spec. and some of the contents are |
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m5m4v4169crt-10256k-word16-bit1024-word+4 | |
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Contextual Info: LMV951 1V, 2.7 MHz, Rail-to-Rail Input and Output Amplifier with Shutdown Option General Description Features The LMV951 amplifier is capable of operating at supply voltages from 0.9V to 3V with guaranteed specs at 1V and 1.8V single supply. The input common mode range extends to both power supply |
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lmv951 | |
M5M4V4169TP
Abstract: m5m4v4169 1kx16 M5M4V4169TP-15 M5M4V4169TP15 M5M4V4169TP20 256K x 16-Bit CMOS Dynamic RAM fast page 70 AS3A
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m5m4v4169tp-15256k-word16-bit1024-wqrd+9 | |
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Contextual Info: LMV951 LMV951 1V, 2.7 MHz, Rail-to-Rail Input and Output Amplifier with Shutdown Option Literature Number: SNOSAI3B LMV951 1V, 2.7 MHz, Rail-to-Rail Input and Output Amplifier with Shutdown Option General Description Features The LMV951 amplifier is capable of operating at supply voltages from 0.9V to 3V with guaranteed specs at 1V and 1.8V |
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lmv951 | |
LMV951
Abstract: LMV951MK LMV951MKX MK06A AS3A
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lmv951lmv951mklmv951mkxmk06a+1 | |
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Contextual Info: »o ^T S ìT ^Ì@ ìì ;f¿A? q'iÜ¡ MITSUBISHI LSIs M5M4V4169TP-15,-20 Oct 26,1992 4MCDRAM:4M 262144 - WORD BY 16 - BIT) Cache DRAM with 16k (1D24-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice. |
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m5m4v4169tp-151d24-word16-bitm5m4v4169tp+2 | |
DW311
Abstract: radix-4 DIT FFT C code Am29540 64 point dit radix-4 w2k 29 JDW-3
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am2954040-pin03567cdw311+4 | |
1kx16
Abstract: diode wb1 SCR table TK 69 TSOP
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m5m4v16169dtp/rt-716mcdram16-bit1024-word+7 | |
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Contextual Info: HT46R73D-3 Dual Slope A/D Type 8-Bit OTP MCU with LCD Features • Operating voltage: · Internal 12kHz RC oscillator fSYS=4MHz: 2.2V~5.5V fSYS=8MHz: 3.3V~5.5V · External 32.768kHz Crystal oscillator · HALT function and wake-up feature reduce power · Three system oscillators: |
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ht46r73d-312khz768khz15-bit+1 | |
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Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 1.1 M5M4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-W ORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary P IN C O N F IG U R A T IO N T h is d o c u m e n t is a p re lim in a ry T a rg e t S p ec, and so m e o f th e co n te n ts are |
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m5m4v4169crt-10256k-w16-bit1024-word+3 | |
LMV951
Abstract: LMV951MK LMV951MKX MK06A AC line snubber 3 phase 1000 amp
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lmv951lmv951mklmv951mkxmk06a+1 | |