T00BL4B Search Results

Contextual Info: IBM014405 IBM014405B 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA - Standby Current: CMOS Inputs (max) - 1.0 mA • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V

Contextual Info: IBM0165165B IBM0165165P 4M X 16 12/10 EDO DRAM Features 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write Single 3.3 ± 0.3V power supply Performance: Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time RAS only Refresh

Contextual Info: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2 M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

Contextual Info: IB M 0 1 5 1 6 0 IB M 0 1 5 1 6 1 256K X 16 DRAM Features • 256K X • 66MHz EDO performance 16 DRAM • Non-Persistent WPBM mode • Performance: Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CË 12ns 14ns 15ns Ua Column Address Access

Contextual Info: IB M 1 1 D 1 3 2 5 B IB M 1 1 D 2 3 2 5 B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Une Memory Modules • Performance: -6 0 -7 0 ! t RAc ! RA S A ccess Tim e 60ns 70ns ; tcAc I C A S A ccess Tim e 15ns 18ns I aa ; Access Tim e From Address

SO-DIMM 144-pin

Contextual Info: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns

Contextual Info: IBM11S2325HP IBM11S4325HP IBM11S2325HM IBM11S4325HM 2M/4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -6R -70 I rAC RAS A ccess T im e ; 60ns j 60ns 70ns fcAC CAS Access Tim e i 15ns [ 17ns 20ns AA Access Tim e From Address

Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to

Contextual Info: IBM14M3272IBM14M6472 IBM14M3264 High Performance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications • Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a

Contextual Info: IBM043610ULAA IBM041810ULAA Prelim inary 32K X 36 & 64K X 18 SRAM Features • Asynchronous Output Enable and Power Down Inputs • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Flow Thru Mode Of Operation with Self-Timed Late Write

Contextual Info: IBM11D4320B IBM11D8320B 4M/8M X 32 DRAM Module Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • Performance: -6 0 -70 tRAC R A S A ccess Tim e 60ns 70ns tCAC C A S A ccess Tim e 15ns 20ns tAA A ccess T im e From Address 30ns 35ns ÍRC Cycle Tim e

Contextual Info: IBM11T2640HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance: • System Performance Benefits:

Contextual Info: IB M 1 1 S 8 3 2 5 H P 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: High Performance CMOS process Single 3.3V ± 0.3V Power Supply Low active current consumption All inputs & outputs are LVTTL 3.3V compati­

Contextual Info: IB M 1 1 D 2 3 2 5 H 2M x 32 DRAM Module Features Thin outline .104” Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & CMOS compatible Extended Data Out (EDO) access cycle Refresh Modes: RAS-Only, CBR, and Hidden

Contextual Info: IB M 1 1 M 4 7 3 0 H IB M 1 1 M 4 7 3 0 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits:

Contextual Info: § = =¥1 = = r= - = IB M 0 4 3 6 1 0 Q L A IB M 0 4 1 8 1 0 Q L A Preliminary 32K X 36 & 64K X 18 SRAM Features Common I/O • 3 2K x 36 or 6 4K x 18 Organizations Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology • Synchronous Flow-Thru Mode Of Operation

11D1320B-60J

Abstract: 11D-1320B
Contextual Info: IBM11D1320B IBM11D2320B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-ln-Line Memory Module • Performance: High Performance C M O S process Single 5V, ± 0.5V Power Supply Low active current dissipation All inputs & outputs are fully TTL & C M O S

Contextual Info: RGB528A 1.0 Microprocessor Access As seen on the microprocessor bus there are eight I/O addresses, selected by RS[2:0], Two indirect schemes are used to access all of the internal registers and arrays through these eight primary I/O addresses. The first scheme is standard VGA, and operates when

Contextual Info: IBM0165805B IBM0165805P 8M x 8 12/11 EDO ORAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: -50 -60 tRAC RAS Access Time 50ns 60ns tCAC CAS Access Time 13ns 15ns • Extended Data Out Hyper Page Mode

Contextual Info: IBM11S1325LP IBM11S2325LP IBM11S1325LM IBM11S2325LM 1M/2M X 3 2 S O DIMM Module Features • 72-P in Sm all Outline D ual-ln -L ine M em o ry M odule • Perform ance: i -60 ! -6R -70 : W c ! RAS Access Tim e I 60ns ! 60ns 70ns tcAc ; CAS Access Tim e 15ns ! 17ns

Contextual Info: IB M 1 1 M 1 6 7 3 0 B IB M 1 1 M 1 6 7 3 0 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 16Mx72 Fast Page Mode DIMMs • Performance: • System Performance Benefits: - Buffered inputs except RAS, Data

Contextual Info: IBM11N4645B/C IBM11N4735B/C 4M x 64/72 DRAM MODULE • System Performance Benefits: Features • 168 Pin JED EC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64, 4Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 -70 Wc RAS Access Time

Contextual Info: I =¥= = = = •= IB M 0 3 8 3 2 9 P Q 6 IB M 0 3 8 3 2 9 N Q 6 Advance 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos­ itive edge of system clock. • Internal pipelined operation; column address can be changed every clock cycle.

Contextual Info: IBM11T2645HP I = 2M X 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 2Mx64 Extended Data Out SO DIMM • Performance: -60 -6R -70 tRAC ; RAS Access Time 60ns 60ns 70ns tcAc CAS Access Time