145MA Search Results

CBMF1608T4R7M

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBMF1608T4R7M Features Item Summary 4.7 H(±20%), 145mA, 470mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

APC UPS 700 CIRCUIT DIAGRAM

Abstract: APC UPS CIRCUIT DIAGRAM ONET1141L
Contextual Info: ONET1141L www.ti.com SLLSEB7 – MAY 2012 11.3 Gbps Modulator Driver Check for Samples: ONET1141L FEATURES 1 • • • • • • • • Digitally Selectable Output Amplitude up to 2.0VPP Single-Ended Digitally Selectable Bias Current up to 145mA Source

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2518T150M Features Item Summary 15 H(±20%), 145mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1007/2518

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T680K Features Item Summary 68 H(±10%), 145mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T680K Features Item Summary 68 H(±10%), 145mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218

CIRCUIT DIAGRAM APC UPS 700

Abstract: APC UPS CIRCUIT DIAGRAM APC UPS 800 CIRCUIT DIAGRAM UPS APC 800 CIRCUIT UPS APC CIRCUIT diagram APC UPS 250 CIRCUIT DIAGRAM APC UPS CIRCUIT layout UPS APC CIRCUIT ups 800 apc ups Internal circuit diagram 10g tosa EML
Contextual Info: ONET1141L www.ti.com SLLSEB7 – MAY 2012 11.3 Gbps Modulator Driver Check for Samples: ONET1141L FEATURES 1 • • • • • • • • Digitally Selectable Output Amplitude up to 2.0VPP Single-Ended Digitally Selectable Bias Current up to 145mA Source

CIRCUIT DIAGRAM APC UPS 700

Abstract: APC Back UPS 500 CIRCUIT apc ups 700 ONET1141L
Contextual Info: ONET1141L www.ti.com SLLSEB7 – MAY 2012 11.3 Gbps Modulator Driver Check for Samples: ONET1141L FEATURES 1 • • • • • • • • Digitally Selectable Output Amplitude up to 2.0VPP Single-Ended Digitally Selectable Bias Current up to 145mA Source

KA2211

Abstract: y 4m t1000 ka221
Contextual Info: n 1 + V CC a 100,0 y 4 47,0r <> ASO PROTECTION + 1 Q- HhY 47,0 KA22 AF POWER AMPLIFIER 2x5,8W Vcc MAX = 25V VCC TYP = 13?2V VCC RNG = 10. J 8V Po R l =4 Q TÜH =10% 4 fi 40 loco typ =80mA Icco MAX = 145mA I MAX = 3,5A RlN -33k Gain = 52dB Noise = 1,5 0i RiHJ-C = Case S I P 1 2 H 1

Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAL02VD150K Features Item Summary 15 H ±10% , 145mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm

xk power

Abstract: icco 2x58W
Contextual Info: P O W E R A M P L IF IE R 2x5, 8W V cc V cc Vcc MAX TYP RNG = 25V = 13,2V = 9.1SV P d = 2x5,8W R l = 4 Ohm TDH = 10% ICCO TYP Icco MAX IMAX = 4 = 80mA = 145mA ,5A = ïïk Gain = 52dB Noîse = 2mkV R in R tkj - C = Case Z I L 1 2 = -

LCX244

Abstract: lcx244 MOTOROLA
Contextual Info: LCX Family Characteristics LCX and LVT Products Product Family 74LCX244 74LVC244A 74LVT244A Technology CMOS CM OS BICMOS ICCL mA 0.01 0.01 12.0 130mA 145mA 275mA 6.5ns 6.5ns 4.1ns >-24mA/24mA -18m A/16mA -24m A/24m A -12m A/? -32m A/64m A -8m A/16m A YES

Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TA150K Features Item Summary 15 H ±10% , 145mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm

Contextual Info: KM641003B CMOS SRAM 256K x 4 Bit with (SEjHigh-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,t2ns(Max. • tow Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM641003B - 8 : 150mA(Max.) KM641003B - 1 0 :145mA(Max.)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2518T150K Features Item Summary 15 H(±10%), 145mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1007/2518

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBMF1608T4R7M Features Item Summary 4.7 H(±20%), 145mA, 470mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

CIRCUIT DIAGRAM APC UPS 700

Abstract: APC UPS CIRCUIT DIAGRAM UPS APC 800 CIRCUIT UPS APC CIRCUIT ups 800 APC UPS 800 CIRCUIT DIAGRAM UPS APC CIRCUIT diagram APC UPS CIRCUIT layout CIRCUIT APC UPS 700 APC BR 800 IN UPS APC BR 600 IN UPS
Contextual Info: ONET1141L www.ti.com SLLSEB7 – MAY 2012 11.3 Gbps Modulator Driver Check for Samples: ONET1141L FEATURES 1 • • • • • • • • Digitally Selectable Output Amplitude up to 2.0VPP Single-Ended Digitally Selectable Bias Current up to 145mA Source

TA7240AP

Abstract: TA7240 2X58W
Contextual Info: 'A7240A □ 9 f V CC POWER AMPLIFIER 2x5,8W V c c MAX = 2 5 V V c c T ÏP = 1 3 ,2V VCC RNG = 9 . J 8 V INPUT 1> ? 6 O PO = 2x5,8W R l = 4 Ohm TDH = 10% ICCO T ÏP = fiO m A Icco max = 145mA I MAX = 4 ,5 A RlN = 33k Gain = 52dB N oise = 2m kV R th j- c = -

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T680K Features Item Summary 68 H(±10%), 145mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218

Contextual Info: KM641003A CMOS SRAM 256K X 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 2SmA(Max.) (CMOS) : 8mA(Max.) Operating KM641003A -1 2 : 150mA(Max) KM641003A - 1 5 : 145mA(Max.)

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids

TIM1213

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET

BGA144 13x13 package

Abstract: DesignWare Hi-Speed USB On-The-Go Controller SCR trickle charger circuit trickle battery charger circuit using scr 7476 up down counter Palmchip designware usb otg IHI-0011A M25PXX hitachi elko
Contextual Info: AS3525-A/-B C22O22 Data Sheet, Confidential å Datasheet, Confidential AS3525 Advanced Audio Processor System 1 Description This highly flexible and fully integrated audio processor system AS3525 combines strong calculating power, high performance audio features with system power management options for battery

Contextual Info: FS3862 Data Sheet Intelligent Charger Management Controller Rev. 1.1 Mar. 2006 Fortune Semiconductor Corp. FS3862-DS-11_EN CR-004 FS3862 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874