IBM014405 Search Results

Contextual Info: IBM014405 IBM014405B 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA - Standby Current: CMOS Inputs (max) - 1.0 mA • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V

Contextual Info: I = = = = '= IBM014405 IBM014405M IBM014405B IBM014405P Preliminary 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 7 0 mA (5.0V) • Power Supply: 3.3V ± 0 .3V or 5.0V ± 0.5V

IBM0144051M

Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Contextual Info: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014445 IBM014445B 1M x 4 10/10 QUAD CAS EDO DRAM Features • Standard Power • Low Power Dissipation

Contextual Info: IBM014405 IBM014405B IBM014405M IBM014405P 1M x 4 10/10 EDO DRAM 1Ä-I Features • 1,048,576 w ord by 4 bit organization Low P ow er D issipation - A ctive max - 95 m A / 8 0 m A (3.3V) - 85 m A / 70 m A (5.0V) • Pow er Supply: 3.3V ± 0.3V o r 5.0V ± 0.5V

din 4232

Abstract: IBM014405P1M IBM0144051M IBM014405B1M IBM014405M1M
Contextual Info: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405M IBM014405B IBM014405P 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization

Contextual Info: IBM014405 IBM014405M IBM014405B IBM014405P 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V • Extended Data Out (Hyper Page) Mode

IBM0144051M

Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Contextual Info: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. Preliminary IBM014445 IBM014445M IBM014445B IBM014445P 1M x 4 10/10 QUAD CAS EDO DRAM Features • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V

IBM0144051M

Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Contextual Info: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405B 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max

Contextual Info: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features

64mb edo dram simm

Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Contextual Info: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s

2m x 32 SRAM SIMM

Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
Contextual Info: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P