NDS9956A Search Results

NDS9956A

Contextual Info: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9956A

Contextual Info: N February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

9956A

Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTO R NDS9956A Dual N-Charmel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m o de pow er field effect tra nsistors are produced using Fairchild's proprietary, high

Contextual Info: February 1996 N NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

NDS9956A

Abstract: F011 F63TNR F852 FDS9953A L86Z CBVK741B019
Contextual Info: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9956A

Contextual Info: National Semiconductor” M ay 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p ow er field effect tran sisto rs are produced using National's p ro p rie ta ry, high cell density, DMOS technology.

NDS9956A

Abstract: so8 LD3 Transistor dj rw
Contextual Info: February 1996 N NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

NDS9956A

Contextual Info: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BC1482-ND

Abstract: 0603 smd CAPACITOR CAPACITOR 33PF smd schottky diode 82 NTC Thermistor smd 10k 0603 2.1mm DC power jack SAMTEC smd capacitor pot 10K ohm 22pf smd capacitor smd schottky diode s4
Contextual Info: 2400 Vendor Part # Digikey 0 490-1370-2-ND 1 490-1370-2-ND 2 490-1382-2-ND 1 490-1392-6-ND 2 PCC180CNTR-ND 2 PCC220CNTR-ND 2 PCC330ACVTR-ND 2 PCC680ACVTR-NDD 1 PCC103BNTR-ND 17 PCC1828TR-ND 1 PCC1816TR-ND 2 399-1586-2-ND 1 399-3029-2-ND 2 PCE3338TR-ND Value

REG711-5

Abstract: NDS9956A J4-14 RS232 MAX202 j316 F1 J37 M30280F J416
Contextual Info: 5 4 3 2 1 DVDD_3.3V C20 0.22uF DVDD_5.0V Power Source Select 6 8 GND 4 C19 2.2uF + REG711-5.0 R25 10k 1 JP2-1 14 7 T1OUT T2OUT 13 8 R1IN R2IN RS232_OUT RS232_IN J2-4 RS232_RTS J2-5 2 C1+ 1 C1C2+ 3 4 C2- 5 T1IN T2IN 11 10 R1OUT R2OUT 12 9 VCC V- J2-7 J2-6 RS232 POWER

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

601lt

Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
Contextual Info: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |

Contextual Info: S E M IC O N D U C T O R w w w .fa irc h ild s e m i.c o m tm RC5060 ACPI Switch Controller Features Applications • Implements ACPI control with PWROK, SLP_S3# and • Camino Platform ACPI Controller • Whitney Platform ACPI Controller SLP_S5# Description

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

FDS4953

Abstract: FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975
Contextual Info: Discrete MOSFET SO-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SO-8 N-Channel FDS6898A 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6898AZ 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6894A