MEGAMOS 48 Search Results

42N15

Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

megamos

Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4

a 1712 mosfet

Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Contextual Info: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous

1XTH5N100

Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10

BSC 031 N 06 NS 3

Abstract: 21N50 ixth21n50 IXTM21N50
Contextual Info: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450

IXTH40N25

Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025

21n50

Abstract: 24n50
Contextual Info: nixYS MegaMOS FET IXTH/IXTM 21N50 IXTH/IXTM 24N50 p VDSS ^D25 500 V 500 V 21 A 24 A DS on 0.25 Q 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V„ss Tj =25°C to150°C 500 V vDQR ^ 500 V Vos VGSM Continuous ±20 V Transient ±30

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

40n50

Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
Contextual Info: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75

35N30

Abstract: rm 1117 ixtm35n30
Contextual Info: p VDSS MegaMOS FET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions v MS Tj = 25°G to 150“ C 300 V V«, Tj = 25°C to 150°C; RGS = 1 M£i 300 V V cs Continuous ±20 V VGSM Transient ±30 V ^□25 Tc = 25CC 35

75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Contextual Info: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)

15N60

Abstract: IXTM15N60
Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r

IXTM80N60

Abstract: diode c248 20n60vd
Contextual Info: IXTH/IXTM 20N60 VDSS = 600 V lD25 = 20 A MegaMOS FET ^ D S o n " ß N-Channel Enhancement Mode Symbol Test Conditions VDSS ^ V„on Tj = 25° C to 1 50° C; RGS= Maximum Ratings =25°Cto 150°C 1 M£2 600 V 600 V v GS Continuous ±20 V v GSM Transient

ixth12n100

Abstract: 12n100 3055P
Contextual Info: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000

d2s diode

Abstract: IXTH50N20
Contextual Info: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient

Contextual Info: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V

IS1540

Abstract: C150 ixys st 380-02F
Contextual Info: 3i,;i •■ MegaMOS FET Module IC1f*tipï*''irt'ï: VMO 380-02 F VDSS = 200 V = 385 A D25 RDS on = 4.6 m fì N-Channel Enhancement Mode Preliminary data 2 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C 200 V vDGR Tj = 25°C to 150°C; Res = 10 kD

Contextual Info: □ VDSS MegaMOS FET IXTH/IXTM 10 N90 IXTH/IXTM 12 N90 900 V 900 V ^D25 DS on 10 A 1.10 ß 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25"C to 150°C 900 VoOB Tj = 25°C to 150°C; RGg = 1 M il 900 V Vos Continuous ±20 V VGSM

Contextual Info: □IXYS MegaMOS FET Module VMO 380-02 F VDSS = 200 V = 385 A = 4.6 mQ D25 R DS on N-Channel Enhancement Mode P re lim in a ry d a ta Symbol Test Conditions v* DSS I, v DGR Maximum = 25°C to 150°C 200 V T j = 25°C to 150°C; RGS = 10 kS2 200 V VGS Continuous

Contextual Info: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500

1534F

Abstract: 50n20
Contextual Info: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous

10N90

Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90
Contextual Info: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20