MARKING 1BA Search Results

sot-23 marking 7z

Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Contextual Info: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

zt751

Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max

MMBTH24L

Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking

motorola p1f

Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
Contextual Info: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1

itt 2222a

Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Contextual Info: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

marking CJD

Abstract: A6 marking MRF947t1 marking 6B
Contextual Info: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5

JAHL-5119

Contextual Info: 'ON B DATE J& » REV. 0 5 1 8 0 lPS DON W. R NO. & m D E S C R IP T IO N a Ü DR. s m AP PD. à CHK. APPD. GNIMVag WHI TE MARKING AS INDICATED N0TE3 { SLASH PART: POLARI ZATI ON KEY) D E S IQNATION 'op'4la>i J N2AW05MH MODIFICATION NUMBER CONTACT SIZE(H:#16)

Contextual Info: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • small capacitance BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package

BA892

Abstract: diode marking code PB BA592 BA892-02L BA892-02V SC79 SCD80 diode MARKING CODE RP diode Marking Code AA
Contextual Info: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • Small capacitance • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

Contextual Info: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • small capacitance BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package

marking G5s

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

Pin diode G4S

Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

BAR63-02V

Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63-05

Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

02LRH

Abstract: BAR64-03W bar6403w e6327
Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

BAR88-07LRH

Abstract: BAR88-099LRH BAR88 BAR88-02LRH BAR88-02V BAR88-098LRH SC79 TSLP
Contextual Info: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ I F = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion

Contextual Info: BAR65. Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance typ. 0.65 Ω @ 5 mA • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications

BAR63-02V

Abstract: BAR65 BAR65-02L BAR65-02V BAR65-03W SC75 SC79 SCD80
Contextual Info: BAR65. Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance typ. 0.65 Ω @ 5 mA • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications

Contextual Info: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ IF = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion

BAR88

Abstract: BAR88-02V BAR88-07LRH BAR88-02L BAR88-02LRH BAR88-07L4 BAR88-098LRH BAR88-099L4 BAR88-099LRH SC79
Contextual Info: BAR88. Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance typ. 1.5 Ω @ IF = 1 mA • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion