BAR63 Search Results

Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

marking hz SOD-323

Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
Contextual Info: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

BAR63V-03

Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63-07F

Abstract: P3S marking TSFP-4
Contextual Info: BAR63-07F XYs Silicon PIN Diode Preliminary data 3
PIN diode for high speed switching of RF signals 2 4 1
Very low forward resistance low insertion loss
Very low capacitance (high isolation) TSFP-4
small inductance
For frequencies up to 3GHz
Ultra small SMD package for dual diodes

Contextual Info: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63-02V

Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

Contextual Info: BAR63V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-04

Abstract: BAR63V-04-GS08 BAR63V-04-GS18
Contextual Info: BAR63V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-05W

Abstract: BAR63V-05W-GS08 BAR63V-05W-GS18
Contextual Info: BAR63V-05W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05W was designed for RF signal tuning. As a function of the forward bias current the

BAR63V-06

Abstract: BAR63V-06-GS08 BAR63V-06-GS18
Contextual Info: BAR63V-06 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

DIODE marking A2 SCD80

Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Contextual Info: BAR63. Silicon PIN Diodes
PIN diode for high speed switching of RF signals
Very low forward resistance low insertion loss
Very low capacitance (high isolation)
For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05

BAR63V-04

Abstract: BAR63V-04-GS08 BAR63V-04-GS18
Contextual Info: BAR63V-04 Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Pin diode G4S

Abstract: BAR63-02L BAR63-04W BAR63 BAR63-03W BAR63-04 BAR63-05 BAR63-05W BAR63-06 BAR63-06W
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05

BAR63V-06

Abstract: BAR63V-06-GS08 BAR63V-06-GS18
Contextual Info: BAR63V-06 Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: Product specification BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance

BAR63V-04W

Abstract: BAR63V-04W-GS08 BAR63V-04W-GS18
Contextual Info: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than