EHA07181 Search Results

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

VSO05561

Abstract: A7s marking diode
Contextual Info: BAV 99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol

BAV99T

Abstract: SC75
Contextual Info: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

SC-75

Abstract: VPS05996
Contextual Info: BAV 99T Silicon Switching Diode Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV 99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC-75 Maximum Ratings Parameter

BAT15-04W

Abstract: VSO05561 S8s marking
Contextual Info: BAT15-04W Silicon Schottky Diode Preliminary data 3
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

15-04W

Abstract: VSO05561 marking s8s 1504w
Contextual Info: BAT 15-04W Silicon Schottky Diode Preliminary data 3 • DBS mixer applications up to 12 GHz • Low noise figure • Low barrier type 2 1 VSO05561 C1/A2 3 1 2 A1 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

DIODE marking A2 SCD80

Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Contextual Info: BAR63. Silicon PIN Diodes
PIN diode for high speed switching of RF signals
Very low forward resistance low insertion loss
Very low capacitance (high isolation)
For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05

Contextual Info: BAR 64 . W 3 Silicon PIN Diode
High voltage current controlled RF resistor for RF attenuator and switches 2
Frequency range above 1MHz
Low resistance and short carrier lifetime 1
For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W

Pin diode G4S

Abstract: VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1

BAR64

Abstract: BAR64-04W BAR64-05W BAR64-06W VSO05561
Contextual Info: BAR64.W 3 Silicon PIN Diode
High voltage current controlled RF resistor for RF attenuator and switches 2
Frequency range above 1 MHz up to 3 GHz
Low resistance and long carrier lifetime 1
Very low capacitance at zero volts reverse VSO05561 bias at frequencies above 1 GHz

VSO05561

Contextual Info: BAR 64 . W Silicon PIN Diode 3
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime 2
For frequencies up to 3 GHz 1 BAR 64-04W BAR 64-05W C1/A2 3 BAR 64-06W