BAR64 Search Results

Contextual Info: Product specification BAR64-02W SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 Features +0.05 0.8-0.05 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz + +0.1 0.6-0.1 - Low resistance and short carrier lifetime

BAR64V-04

Abstract: BAR64V-04-GS08 BAR64V-04-GS18
Contextual Info: BAR64V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-05

Abstract: BAR64V-05-GS08 BAR64V-05-GS18
Contextual Info: BAR64V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-05 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

BAR64V-04W

Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M
Contextual Info: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

SMD 02W

Abstract: BAR64-02W SCD80
Contextual Info: BAR64-02W Silicon PIN Diode
High voltage current controlled 2 RF resistor for RF attenuator and switches
Frequency range above 1 MHz up to 3 GHz
Low resistance and long carrier lifetime
Very low capacitance at zero volts reverse 1 bias at frequencies above 1 GHz

VPS05604

Abstract: BAR64-04S
Contextual Info: BAR64-04S 4 Silicon PIN Diode 5 6 Preliminary data
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1MHz up to 3 GHz 2
Low resistance and long carrier life time 3 1 VPS05604
Very low capacitance at zero volts reverse

Contextual Info: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

18342

Contextual Info: BAR64V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64V-06 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-06 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64V-06W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

d3marking

Abstract: sot-23 DIODE marking code D3
Contextual Info: BAR64V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-06

Abstract: BAR64V-06-GS08 BAR64V-06-GS18
Contextual Info: BAR64V-06 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-04W

Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18
Contextual Info: BAR64V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-06

Abstract: BAR64V-06-GS08 BAR64V-06-GS18
Contextual Info: BAR64V-06 Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-06 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64

Abstract: BAR64-04 bar64-05 smd rf transistor marking BAR64-06 Marking POs prs smd
Contextual Info: Diodes SMD Type Silicon PIN Diode BAR64;BAR64-04 BAR64-05;BAR64-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 RF resistor for RF attenuator and swirches 0.55 High voltage current controlled 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: BAR64V-05W-V www.vishay.com Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 FEATURES • High voltage current controlled RF resistor 3 • Small diode capacitance • Low series inductance • Low forward resistance • Improved performance due to two separate dice

Contextual Info: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Marking PTs Ordering Code

transistor 18381

Abstract: BAR64V-06W BAR64V-06W-GS08 BAR64V-06W-GS18
Contextual Info: BAR64V-06W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)

Contextual Info: BAR64V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

1833

Abstract: 1-8256
Contextual Info: BAR64V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be