BAT15-05W
Abstract: VSO05561 noise diode
Contextual Info: BAT15-05W Silicon Schottky Diode DBS mixer applications up to 12 GHz 3 Low noise figure Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W
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bat15-05wvso055615-05weha07179+5ot323jul-06-2001ehd07079ehd07081noise diode
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DIODE T4 A1
Abstract: diode marking T4
Contextual Info: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration
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2-05wvso05561eha07179ot-323+2diode t4 a1diode marking t4
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VSO05561
Abstract: diode bat 85
Contextual Info: BAT 15-05W Silicon Schottky Diode • DBS mixer applications up to 12 GHz 3 • Low noise figure • Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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5-05wvso05561eha07179ot-323+4oct-07-1999ehd07079ehd07081diode bat 85
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SC-75
Contextual Info: BAV 70T Silicon Switching Diode Array Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV 70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC-75 Maximum Ratings Parameter
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vps05996eha07179sc-75oct-07-1999+2ehb00068ehb00065
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BBY53-05W
Abstract: VSO05561
Contextual Info: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W
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bby53-05wvso05561eha07179ot323+1jul-02-2001
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BAV70W
Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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bav70wvso05561eha07179ot323+4jul-06-2001ehb00068ehb0006510tsv
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VSO05561
Abstract: w1901
Contextual Info: BAV 70W Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV 70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol
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vso05561eha07179ot-323oct-07-1999+3ehb00068ehb00065w1901
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VSO05561
Contextual Info: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2
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2-05wvso05561eha07179ot-323+1may-20-1999
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VSO05561
Abstract: BBY52-05W
Contextual Info: BBY52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package
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Contextual Info: BBY 53-05W Silicon Tuning Diode 3 High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W
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3-05wvso05561eha07179ot-323+1dec-07-2000
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SC75
Abstract: BAV70T
Contextual Info: BAV70T Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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bav70tvps05996eha07179aug-24-2001+3ehb00068ehb00065sc75
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VSO05561
Contextual Info: BBY 53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W
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3-05wvso05561eha07179ot-323+1oct-05-1999
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Contextual Info: BBY53-05W 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment High ratio at low reverse voltage 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type BBY53-05W Marking S7s
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bby53-05wvso05561eha07179ot323+1feb-28-2002
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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bar63bar63-04wbar63-05wbar63-06w+9vso05561eha07181eha07179eha07187pin diode g4sdiode c2marking c2 diodediode marking a1marking g5s
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2a2 SOT-23
Abstract: marking code BB bb814
Contextual Info: BB 814 Silicon Variable Capacitance Diode 3 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking 2 • Coded capacitance groups and group matching
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vps05161eha07179ot-23may-10-1999+5ehd07054ehd070572a2 sot-23marking code bbbb814
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DIODE marking A2 SCD80
Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
Contextual Info: BAR63. Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance low insertion loss Very low capacitance (high isolation) For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05
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bar63bar63-02bar63-03wbar63-04+10bar63-04wbar63-04sbar63-05bar63-05wbar63-06bar63-06wdiode marking a2 scd80bar63-02wbar63-02lbar63-02v
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CT10
Abstract: VSO05561
Contextual Info: BBY 55-05W Silicon Tuning Diode 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment • Very low capacitance spread 1 VSO05561
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BBY66-05W
Abstract: VSO05561 diode A2 9 diode MARKING 354
Contextual Info: BBY66-05W Silicon Tuning Diode Preliminary data 3 High capacitance ratio High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 Very low capacitance spread 1 C1/C2 3 1 2 A1 A2 VSO05561
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bby66-05wvso05561eha07179ot323+3jul-26-2001diode a2 9diode marking 354
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Contextual Info: BAR 64 . W 3 Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches 2 Frequency range above 1MHz Low resistance and short carrier lifetime 1 For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W
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Contextual Info: BBY 57-05W Silicon Tuning Diode Preliminary data 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation 1 for VCO’s in mobile communications equipment
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BBY57-05W
Abstract: VSO05561
Contextual Info: BBY57-05W 3 Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance High capacitance ratio 1 Designed for low tuning voltage operation VSO05561 for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs
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A2 diode
Abstract: marking c2 diode VSO05561
Contextual Info: BBY 57-05W Silicon Tuning Diode 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 • For control elements such as TCXOs and VCXOs
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7-05wvso05561eha07179ot-323+3may-20-1999a2 diodemarking c2 diode
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Pin diode G4S
Abstract: VSO05561
Contextual Info: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
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3-04w3-05w3-06wvso05561+5eha07181eha07179eha07187ot-323pin diode g4s
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VSO05561
Contextual Info: BBY 55-05W Silicon Tuning Diode Preliminary data 3 • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • Very low capacitance spread
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