M5M5165 Search Results

TC551001a

Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Contextual Info: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##

5M5165P

Abstract: 8192-WORD 28P4 M5M5165
Contextual Info: MITSUBISHI LSIs M5M5165P, FP-70, -10,•12,-15, -70L,-10L,-12L,-15L 6 5 5 3 6 -B IT 8 1 9 2 -WORD BY 8 -B IT CMOS STATIC RAM DESCRIPTION The M 5M 5165P.FP is a 65536-bit CMOS static RAM orga­ nized as 8 1 92 words by 8 bits which is fabricated using PIN CONFIGURATION (TOP VIEW)

IH3550

Abstract: m5ii5
Contextual Info: MITSUBISHI LS Is M5M5165P,FP-70,-10,-12,-15, -70L,-10L,-12L,-15L 6 5 S 3 6 -B IT 8 1 9 2 -W O R D BY 8 -B IT CMOS STATIC RAM DESCRIPTION The M 5 M 5 1 6 5 P ,F P is a 6 5 5 3 6 -b it C M OS static R A M orga­ PIN CONFIGURATION (TOP VIEW) nized as 8 1 9 2 words by 8 bits which is fabricated using

Contextual Info: MITSUBISHI LSIs M5M5165P,FP-70,-10,-12,-15, -70L,-10L,-i2L,-15L 6 5 5 3 6 -B IT 8 1 9 2 -W O R D BY 8 -B IT CMOS STATIC RAM DESCRIPTION The M 5 M 5 1 6 5 P ,F P is a 6 5 5 3 6 -b it C M OS static R A M orga­ PIN CONFIGURATION (TOP VIEW) nized as 8 1 9 2 words by 8 bits which is fabricated using

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MB81C78A-35

Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
Contextual Info: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)

104 k5k capacitor

Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
Contextual Info: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

LH5164

Abstract: km6264 oki cross reference w24512 cross hm6264 KM62256 MSM5178 uPD43256 PD4364 MSM51257
Contextual Info: CROSS REFERENCE GUIDE SLOW SPEED CMOS SRAMs WINBOND HITACHI W241024 HM628128 W24512 - W24257 HM62256P/FP W2465 HM6264 SONY CXK581000P/M - CXK58257P/SP/M CXK5864BP FUJITSU MB841000 - MB84256 //PD43256 / PD4364 NEC - MB8464 TOSHIBA TC551001PL/FL - TC55257BP/BF

F*P10L

Abstract: FP1012 m5m5165p
Contextual Info: MITSUBISHI LS Is M 5 M 5 1 6 5 P , F P -7 0 , - 1 0 , - 1 2 , - 1 5 , - 7 0 L ,- 1 0 L ,- 1 2 L ,- 1 5 L 6 5 S 3 6 - B IT 8 1 9 2 -W ORD B Y 8 -B IT CMOS S TA TIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 5 1 6 5 P ,F P is a 6 5 5 3 6 -b it C M OS static R A M orga­

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

hm6265

Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
Contextual Info: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258