DS2009 Search Results

DS2009SF

Abstract: DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 DS4190-4
Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode

DS4190-4

Abstract: AN4839 DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 3400A
Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode

DS2009SF

Abstract: DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 DS4190-4 DS4190
Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

rc4565

Abstract: A1536 DS2009 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2013 141S1
Contextual Info: V y * DALLAS SEMICONDUCTOR 512 DS2009 9 FIFO Chip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W £ 1# D8ÍZ 2 D3C 3 D2C 4 D1C 5 DOH 6 XI c 7 FF C 8 • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write

DS2011

Abstract: DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010
Contextual Info: DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 F IF O C h ip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W C 1# D 8d 2 D3C 3 D2Ü 4 • Flexible 5 1 2 x9 organization • Low-power HCMOS technology D id DOC XI 0 FF C • Asynchronous and simultaneous read/write

Contextual Info: DS2009SN43 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage4.3k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#

Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode

DS2011

Abstract: DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010 S2009
Contextual Info: DS2009 DS2009 5 1 2 x 9 FIFO Chip DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture • Flexible 512 x 9 organization • Low-power HCMOS technology W C 1« D8d 2 28 □ VCC 27 D D4 D 3C 3 D2Ü 4 26 □ 25 □ 24 □

Contextual Info: AUGUST 1995 DS2009SF DS4190-2.2 DS2009SF RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 4800V VRRM 1105A IF AV 20500A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

DS2009

Abstract: DS2011 DS2013 100 watt hf transistor 12 volt DS2010 DS2009-50 DS2009-65 DS2009-80 DS2012 DS2009-120
Contextual Info: DS2009 DS2009 512 x 9 FIFO Chip • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications PIN ASSIGNMENT W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 D1 D0 XI FF 5 6 7 25 24 23 D6

Contextual Info: @ MITEL DS2009SF Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4190 - 2.2 DS4190 - 2.3 KEY PARAMETERS VRRM 4800V IF av, 1105A 'fs m 20500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

RPI-1035

Contextual Info: DS2009 DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 F IF O Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1» 26 □ V C C • Flexible 512 x 9 organization D8C 2 D 3C 3 27 3 0 4 26 □ D5 • Low-power HCMOS technology D2C 4 D1C 5

Contextual Info: DS2009 DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip FEATURES PIN DESCRIPTION do •First-in, first-out memory-based architecture •Flexible 512 x 9 organization •Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications

DIN 1445

Abstract: DS1201
Contextual Info: M ECH AN ICA L D R A W IN G S 8 - TO 28-PIN DIP 300 MIL Includes: DS1200 DS1259 DS2009D DS2010D DS2011D DS2013D PKG 8-PIN 10-PIN 14-PIN 16-PIN DIM MIN MAX MIN MAX MIN MAX MIN MAX AIN. MM 0.360 9.14 0.400 10.16 0.480 12.19 0.520 13.21 0.740 18.80 0.780 19.81

Contextual Info: DS2009SN42 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage4.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#

dallas DS2009

Abstract: cbc 327 t4635 DS200B DS2000-35 512X9 DS200D ds2000 DS2011 DS200
Contextual Info: DS2009 DALLAS S EM IC ON DU CTO R CORP SGE D 2bl413G DDDHbOl 2 DALLAS SEMICONDUCTOR DAL - 3 5 ~ DS2009 5 1 2 x 9 F IFO Chip FEATURES 3 PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1# 2$ □ VCC sseS gsi DSC 2 27 304 f"A T 'T T3S3fâ6'

DS4190

Contextual Info: MITEL DS2009SF Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4190 - 2.2 DS4190 - 2.3 KEY PARAMETERS VRRM 4800V IF av, 1105A 'fs m 20500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

Contextual Info: S i GEC PLESSEY a u g u st SEMI CO NDUC TOR S 19 9 5 DS4190-2.2 DS2009SF RECTIFIER DIODE KEY PARAMETERS V,RRM 4800V 1105A J AV 20500A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

ps2009

Abstract: A1536 DS160B DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-80
Contextual Info: DS2009 DALLAS SEMICONDUCTOR FEATURES DS2009 512 x 9 FIFO Chip * PIN ASSIGNMENT • First-in, first-out memory-based architecture W E 1# DSC 2 D3C 3 • Flexible 512 x 9 organization D2C 4 D iC 5 • Low-power HCMOS technology • Asynchronous and simultaneous read/write

Contextual Info: DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip PIN ASSIGNM ENT FEATURES • First-in, first-out memory-based architecture • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications

Contextual Info: DS2009SN35 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#

Contextual Info: DS2009SN39 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.9k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#

DS2009

Abstract: DS2013
Contextual Info: DS2013 DALLAS SEMICONDUCTOR DS2013 8 1 9 2 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* D8C 2 D3C 3 • Flexible 8192 x 9 organization • Low-power HCMOS technology D2C 4 D1C 5 DOC 6 • Asychronous and simultaneous read/write