T4635 Search Results

NI 5-G12-AP6X-H1141

Abstract: T4635690
Contextual Info: Housing Style Part Number 12 mm - Embeddable, picofast Connection Bi 2-G12-AN6X-V1131 Bi 4-G12-AN6X-V1131 Bi 2-G12-AP6X-V1131 Bi 4-G12-AP6X-V1131 12 mm - Nonembeddable, picofast Connection Ni 5-G12-AN6X-V1131 ID Number T4635583 M1690707 T4606597 M1690703

5-G12-AP6X-V1131

Abstract: NI 5-G12-AP6X-H1141 2-G12K-AP6X-H1141 5-G12-Y0-H1141 5G12A turck 1-800-544-7769 4G12A t10055 M1690703
Contextual Info: Housing Style Part Number 12 mm - Embeddable, picofast Connection Bi 2-G12-AN6X-V1131 Bi 4-G12-AN6X-V1131 Bi 2-G12-AP6X-V1131 Bi 4-G12-AP6X-V1131 12 mm - Nonembeddable, picofast Connection Ni 5-G12-AN6X-V1131 ID Number T4635583 M1690707 T4606597 M1690703

quad port ram

Abstract: DS2015 32-PIN D062 DS1206 DS2011 DS2012 DS2012R
Contextual Info: DALLAS SEMICONDUCTOR CORP OTE D | S b m i 3 G 0DDE12b 0 I T '^ 6 '3 5 & Dallas Semiconductor 4 096x9 FIFO PRELIMINARY : DS2012 28-Pin DIP DS2012R 32-Pin PLCC a“ FEATURES PIN CONNECTIONS • First-in, first-out memory based architecture • Flexible 4096 x 9 organization

TS93C46

Abstract: TS93C46CP 9346 EEPROM TS93C46C S1063 NMC9346 11XXXXX
Contextual Info: 7 C 5C)537 DQ5753M 3 • S C S -T H O M S O N S G S-THOMSON _ TS93C46 3QE 5 1K BIT SERIAL CMOS EEPROM ■ H IG H L Y R E L IA B L E C M O S F L O A T IN G G A T E TEC H N O LO G Y. ■ S IN G L E 5 -V O L T S U P P L Y ■ E IG H T P IN P A C K A G E .

1DT7

Abstract: 72125
Contextual Info: INTEGRATED 3ÔE D • 4ÛSS771 ÜQDhBQS 3 ■ IDT _ T - H f e - S S - DEVICE CMOS PARALLEL-TO-SERIAL FIFO IDT721Q5 IDT72115 IDT72125 256 x16, 512x16,1024x 16 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • •

Contextual Info: . New Data File Number CD54/74HC7030 CD54/74HCT7030 2122 HARRIS SEMICOND SECTOR 27E D E3 4302271 0016145 0 Hi H AS T -lC t-S S -M 5 ooT p u t 64-Word x 9-Bit FIFO Register; 3-State Type Features: -Q 0 DATA-OUT “ READY _ DATA-IN READY 92 C S - 4 2 6 6 0 FUNCTIONAL DIAGRAM

Contextual Info: MICRON TECHNOLOGY INC 3ñE J> blllS M T I 00 0 3 0 7 Q 5 * M R N ADVANCE •• I. . " • " . {.i.MW-1 'M r-^ 4 -3 r 1K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View OPTIONS • Timing 15ns access time 20ns access time 25ns access time 35ns access time

MSM514221-6

Abstract: TMs4C1050 MSM514221
Contextual Info: 4bE T> b72424G 0GlQ04b ATS « O K I J O K I semiconductor O K I MSM514221 SEMICONDUCTOR GROUP 262,263 w ords X 4 bits field memory GENERAL MSM514221 is a CMOS dynamic memory device organized as 256K+ 120 words by 4 bits; serial access memory that performs high speed, asynchronous read/write operation.

tba 180s

Contextual Info: 17E D ZIL06 INC • TJÄ4043 0G137Db S m il it a r y Z l l O g Z ' - p r o d u c t S ç e c liic a tio n ^ " ^ £ £ 0 ^ “T - q b ^ s October 1988 Z 8 0 3 8 /Z 8 5 3 8 M ilitary FIO FIFO In p u t/ O u tp u t Interface Unit FcaturM ■ 128-byte FIFO buffer provides asynchronous

T4205030

Abstract: T4635400 t1690 T4010000 T4670250 T130-40
Contextual Info: Housing Style 12 mm - Embeddable, Potted-In Cable 12 mm - Embeddable, Potted-In Cable Part Number ID Number Features Sen s Ran ing ge m m Inductive Sensors Bi 3-GT12K-AD4X/S1610 T4405083-2 armorguard 3 Bi 2-EG12HK-AN6X/S1589 Bi 2-G12K-AN6X Bi 4-G12K-AN6X

Contextual Info: ÛUALITY SEM IC ON DU CT OR INC 41E D Q S7201, Q • ?4bEifiG3 OGQQMbl S M û S I QS7202 High Sp66d CMOS 9-bit FIFO Buffer Memories 512x9: 1Kx9: QS7201 QS7202 FEATURES/BENEFITS •15ns flag and data access times • Fully Asynchronous Read and Write I • Zero fall-through time

Contextual Info: MICRON TECHNOLOGY INC SSE ]> blllSHT 00038^5 383 IMRN MT52C9020 2K x 9 FIFO 'T - M k - S S FIFO 2K x 9 FIFO FEATURES • • • • • • • • • • • Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply

4635

Abstract: T46-3 IDT7205
Contextual Info: I II •. INTEGRATED 3ÛE D DEVICE '* ^ _ . a f i B ^ í f t E ü l m 4Ö5S771 Ü Ü G b S m 3 ■ IDT H F % - 35* CMOS PARALLEL FIRST-IN/FIRST-OUT FIFO 8192 x 9-BIT IDT72Ö5 FEATURES: DESCRIPTION: • First-1n/First-Out dual-port memory • 8192 x 9 organization

S-2918

Contextual Info: SEIKO INSTRUMENTS U S A 31E D Bi 0123443 OODObOB 1 « S E I J S-2918R/I CMOS 1K-bit serial E2PROM Easy interface with serial port The S-2918R/I is a high speed, low power lK -b it E2PROM th a t uses th e CMOS flo atin g -g ate process. The organization is 128-w ordX 8-bit, and it is read or w ritten

Contextual Info: TOSHIBA LOGIC/MEMORY MÔE D FEATURES IT O S E [ PIN CONFIGURATION •F irst-In F irst-O u t Buffer memory TC74AC9001P - 64 X 9 b it TC74AC9003P. 256X9 bit TC74AC9004P.512X9 bit •H igh Speed Operation Access Time tA = 25ns (TYP.) Flag

Contextual Info: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986

Contextual Info: CYPRESS SEMICONDUCTOR 4 bE m D SSflThbS Q0G7173 T ^CYP CY7C401/CY7C403 CY7C402/GY7C404 CYPRESS SEMICONDUCTOR Cascadeablc 64 x 4 FIFO and 6 4 x 5 FIFO Features Functional Description • 64 x 4 CY7C401 an d CY7C403 64 x 5 (CY7C402 a n d CY7C404) H igh-speed first-irt first-o u t m em ory

TSD231

Contextual Info: 13E D I TSD2310 O g DOSSI 5 | VITELIC CORP HF V IT E L IC V61C01 &V61C02 FAMILY HIGH PERFORMANCE LOW POWER 512 x 9 & 1024 x 9 BIT CMOS PARALLEL FIFO MEMORY •%£ Addressing is maintained internally by both ports so that data are stored and recovered sequentially by

Contextual Info: I N T E G R A T E D DE V I C E 3ÔE D • 4A2S771 OODb^bH - r - ^ 8K X 9 & 16K X 9 CMOS PARALLEL IN-OUT FIFO MODULE T ■ - 3 5 IDT * IDT7MP2005 IDT7MP2Û11 In te g ra te d Device Technology, Inc. FEATURES: First-In/First-Out memory module 8K x 9 organization IDT7MP2005

Contextual Info: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width

X24C02

Contextual Info: 3IE D XICOR INC *mi7M3 000270^ t PRELIMINARY INFORMATION Commercial Industrial 2K X24C02 X24C02I 256 x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized 256 x 8

x24c04i

Contextual Info: XICO R INC 31E Commercial Industrial 4K •W 1 7 4 3 D O D B ? 1^ X24C04 X24C04I 51 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS —Active Current Less Than 1 mA —Standby Current Less Than 50 ju,A • Internally Organized as Two Pages

CY7C425

Abstract: CY7C420 CY7C429-30DC CY7C42I-25JI CY7C421-40DC CY7C421 CY7C429 IDT7201 IDT7203 CY7C429-30PC
Contextual Info: 4bE D CYPRESS SSflTbbS □007117 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs • Pin compatible and functional

64-Word

Contextual Info: SEIKO INSTRUMENTS U S A BTE Ö123443 D DGOGSSl T « S E I J S-2911R/I { C M O S 1K-bit sériai E2PROM Gl code The S-2911R/I is a high speed, low power lK -b it E2pROM th a t uses th e CMOS flo atin g -g ate process. E ither 64wordX 16-bit or 128-w ordX 8-bit can be selected . It is