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Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Terminal Blocks & Strips > Product Feature Selector > Product Details D0625 Product Details

r2a3

Abstract: r1a10 M1367 M4589
Contextual Info: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

AD82201

Abstract: AD8221 AD8222 AD8228 AD8251 DA810
Contextual Info: 10 MHz, 20 V/ s, G = 1, 2, 4, 8 iCMOS Programmable Gain Instrumentation Amplifier AD8251 FEATURES FUNCTIONAL BLOCK DIAGRAM DGND WR Small package: 10-lead MSOP Programmable gains: 1, 2, 4, 8 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

ADuM1233

Contextual Info: Isolated, Precision Half-Bridge Driver, 0.1 A Output ADuM1233 FEATURES GENERAL DESCRIPTION Isolated high-side and low-side outputs High side or low side relative to input: ±700 VPEAK High side/low side differential: 700 VPEAK 0.1 A peak output current High frequency operation: 5 MHz maximum

M1110

Abstract: D004 ic P155
Contextual Info: M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System M1110 Parallel Ein-/Ausgabe Box Technische Beschreibung Eiserstraße 5 33415 Verl Datum 05.05.94 Telefon 05246/709-0 Telefax 05246/70980 Version 2.1 Seite 1 von 17 M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System

TS189

Contextual Info: M i c r o c h PIC17C4X i p High-Performance 8-Bit CMOS EPROM/ROM Microcontroller Pin Diagram Devices included in this data sheet: • PIC17CR42 PDIP, CERDIP, Windowed CERDIP • PIC17C42A VDD RC0/AD0 RC1/AD1 RC2/AD2 RC3/AD3 RC4/AD4 RC5/AD5 RC6/AD6 RC7/AD7

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: WSB06200AT High Voltage Power Schottky Rectifier HIGH VOLTAGE SCHOTTKY 6 AMPERES 200 VOLTS Features: *Plastic Package Has Underwriters Laboratory Flammability Classifications 94V-0. *Metal Silicon Junction, Majority Carrier Conduct. *Low Reverse Leakage Current.

17C756A

Abstract: DS30289B PIC17C7XX PIC17C752 PIC17C756A PIC17C762 PIC17C766 17C762 DS30246A Transistor BAR
Contextual Info: PIC17C7XX High-Performance 8-bit CMOS EPROM Microcontrollers with 10-bit A/D • Only 58 single word instructions to learn • All single cycle instructions 121 ns , except for program branches and table reads/writes which are two-cycle • Operating speed:

Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SH IB A THMY728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

OQ45

Abstract: D018 D019 D032
Contextual Info: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.

LA3375

Abstract: LA3373 "vacuum tube" tA3373 13300P LA2110 LA2113 AC voltmeter applications scaj la2113f
Contextual Info: ^ Ofdering number :EN 1128F ] SAMYO F LA3373 N0.1128F M o n o l i t h ic L in e a r IC P i l o t C a n c e l - P r o v i d e d PLL FM MPX D e m o d u l a t o r f o r Car S t e r e o s i unctionè The LA3373 is a DIP-16 package version of the LA3375 th a t/çôn t a ife

Contextual Info: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

toshiba S-AU

Abstract: TC5165805
Contextual Info: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich

ra2b

Contextual Info: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.