AM2147 Search Results

am2147 data

Abstract: AM2147-35 AM2147-45 AM2147-55 AM2147-70 AM21L47-45 AM21L47-55 CD000100 AM2147 cd018
Contextual Info: Am2147/Am21 L47 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS High speed — access times down to 35 ns maximum Automatic power-down when deselected Low power dissipation _ High output drive TTL compatible interface levels No power-on current surge GENERAL DESCRIPTION

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

Contextual Info: Am2147 4096 x 1 Static RAM DISTINCTIVE CHARACTERISTICS • • • High speed — access times down to 35 ns Automatic power-down when deselected Low power dissipation maximum* High output drive • TTL compatible Interface levels • No power-on current surge

AM2147-35

Abstract: AM2147-45 AM2147-55 AM2147-70 AM21L47-45 AM21L47-55 AM2148 Am27C256
Contextual Info: Am2147/Am21 L47 AdvMicro 4096x1 Static RAM _ DeviceS DISTINCTIVE CHARACTERISTICS • • • — access times down to 35 ns maximum Automatic power-down when deselected Low power dissipation H ig h speed • High output drive • compatible 'evels * No power-on current surge

Contextual Info: a Am2147/Am21 L47 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • • • High speed — access times down to 35 ns Automatic power-down when deselected Low power dissipation maximum• High output drive • TTL compatible interface levels

Contextual Info: ADV M IC RO A m MEMORY IME d | 0ES75SÔ Q027S45 7 £ 1 Advanced Micro Devices 2 1 4 7 / A m 21 L 4 7 4096x1 Static RAM DISTINCTIVE C H A RA CTERISTICS • High speed — access times down to 35 ns maximum • Automatic power-down when deselected • Low power dissipation

cd018

Contextual Info: a A m 2 1 4 7 / A m 2 1 Advanced Micro Devices L 4 7 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • • • High speed — access times down to 35 ns Automatic power-down when deselected Low power dissipation maximum• High output drive • TTL compatible interface levels

AM2147-45

Abstract: Stanford Telecommunications STI-5268 "7 Bit Shift Register" am2147 data low bit rate psk modulator 82S212 A128 STEL-5268 AM2147
Contextual Info: FEATURES CONSTRAINT LENGTH 7 RATE 1/3 AND Va THREE BIT SOFT-DECISION IN SIGNED M AGNITUDE OR 2’S COM PLEM ENT FORMAT UP TO 9600 BITS/SEC DATA RATE CODING GAIN OF 5.2 dB AT 1 0 * BER, RATE V2 CODING GAIN OF 6.0 dB (AT 1 0 * BER, RATE Vi) BOTH ENCODING AND DECODING

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

256X4

Abstract: 1024x4 AM2168 Am91L22
Contextual Info: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active

2147 intel

Abstract: Intel 2147H 2147-6 2141L-3 2141L-5 2147H 2147H-1 2147H-2 2147H-3 2147H-4
Contextual Info: 14 4 K • ■ ■ n X ïâfèïïïs m « it ^ CC TAAC max <ns) A TCAC max ns) TOE max (ns) "/ TOH min (ns) nMOS fTOD max (ns) > S t a t i c 7' TWP min (ns) RAM ( 4 0 9 6 X 1 ) tí TBS min (ns) « TDH Ss) T*D rain (ns) TWR max (ns) V D D or V C C (V) 18 P I N