IXYS DSEI 12 Search Results

Contextual Info: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine

Contextual Info: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

ixys dsei 12-10a

Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Contextual Info: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5

Contextual Info: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 C A Type IFAVM = 126 A VRRM = 600 V = 35 ns trr TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ¬ IFAV ­ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

Contextual Info: DSEI 12-06A IFAV = 14 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 Type A C TO-220 AC C A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM

DSEI 12 06A

Abstract: IR 1206A IXYS DSEI 12-06A IXYS DSEI 2
Contextual Info: DSEI 12-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC C  A DSEI 12-06A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

ixys dsei 12-12a

Abstract: 12-12A ixys dsei 120 1212a TO-220 1200V 11A DSEI IXYS ixys dsei 12 ixys dsei 12-10a
Contextual Info: DSEI 12-12A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5

Contextual Info: DSEI 12-12A IFAV = 11 A VRRM = 1200 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM

Contextual Info: DSEI 12-10A IFAV = 12 A VRRM = 1000 V trr = 50 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 00°C; rectangular, d = 0.5 tp < 0 µs; rep. rating, pulse width limited by TVJM

Contextual Info: DSEI 12-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 IFAV = 14 A VRRM = 600 V trr = 35 ns 1 3 Type 2/4 DSEI 12-06AS Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

ixys dsei

Abstract: IXYS DSEI 2X
Contextual Info: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400

DSEI IXYS 2x31-12B

Abstract: 2x31-12B
Contextual Info: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

ixys dsei

Abstract: IRM 1200 80D-5
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

Contextual Info: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine

806-AS

Contextual Info: DSEI 8-06A DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS Type A C TO-220 AC DSEI 8-06A C A C TO-263 AB DSEI 8-06AS NC A = Anode, C = Cathode, NC = No Connection, TAB = Cathode

Contextual Info: lüIXYS 1 Fast Recovery Epitaxial Diodes FRED DSEI 2x30 ^FAVM DSEI 2x31 vrRRM 2x28 A 1200 V 40 ns t v t rsm V rrm T y p e r - r V V 1200 1 2 0 0 DSEI 2x30-12B DSEI 2x31 -12B • - -4 - 5 miniBLOC, SOT-227 B n P DSEI 2x31 DSEI 2x30 Symbol Test Conditions

Contextual Info: DSEI 12-12AZ Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAV = 11 A VRRM = 1200 V trr = 50 ns 1 3 Type DSEI 12-12AZ Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM

ixys dsei 2x30-06c

Abstract: ixys dsei 2x30-05c
Contextual Info: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060

ixys dsei 2x101

Abstract: IXYS DSEI 2 2x91A ixys dsei 2x91
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

DSEI 120-12A

Contextual Info: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM C A Type IFAVM = 109 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 C DSEI 120-12A A C A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFAV ② IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5

ixys dsei

Abstract: DSEI 806-AS ixys dsei 8 8-06A IXYS
Contextual Info: DSEI 8-06A DSEI 8-06AS Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 640 600 DSEI 8-06A 640 600 DSEI 8-06AS IFAV = 8 A VRRM = 600 V trr = 35 ns Type A C TO-220 AC DSEI 8-06A C Symbol Conditions Maximum Ratings IFRMS IFAVM  IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5

Contextual Info: □IXYS DSEI 20-12A Fast Recovery Epitaxial Diode FRED ^R S M 1200V v rrM TyPe 1200V DSEI 20-12A Symbol Test Conditions ^F R M S T"vj ^FAVM ^FRM ^FSM TVJ = A TVJ = 1 50°C TVJ = f , \ 70 17 A 220 A A 130 140 A A t = 10 ms (50 Hz), sine 110 A t = 8.3 ms (60 Hz), sine