IRFP 350 N Search Results

1RFP360

Abstract: TO247AC 1rfp254 1RFP240 1RFP340 TO-247AC IRFP240 IRFP352 IRFP141 IRFP143
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ IRFP140 IR N IRFP141 IR N £ Vg s (V) fë 1 (Ta=25°C ) Id Pd * /C H * /C H (A) (W) Ig ss (nA) Vg s t h ) Id ss Vg s (V) m in max (V ) (V) ma ) (V) (nA) fè F Ds(on) Vd s = Vg s Id Vd s ( ft % g fs Io(on) C iss Coss

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

irfp 9240

Abstract: irfp 240 IRFP p-channel irfp9240
Contextual Info: HARRIS IR F P 9 2 4 0 /P 9 2 4 1 IR FP 9242/P 9243 Avalanche Energy Rated P-Channel Power MOSFETs May 1992 Package Features T O -2 4 7 • -10A and -12A , -2 0 0 V and -15 0 V T O P VIEW • fDS ON = 0 .5 0 ft and 0.7ft • Single Pulse Avalanche Energy Rated

1rfp350

Abstract: 1RFP350R irfp350r FP350 1rfp
Contextual Info: 23 H A F R R IS IRFP350/351Z352/353 IRFP350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1993 Package Features • T O -2 4 7 14A and 16A, 350V - 400V TOP VIEW • rDS on = 0 -3 0 and 0 .4 fl • Single Pulse Avalanche Energy Rated*

Contextual Info: • 4302571 QDSmiD tSü ■ HAS E5J HARRIS IRFP15 0 /1 5 1 /1 5 2 /1 53 IRFP150R/151 R /152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-247 TOP VIEW • 3 4 A and 40 A , 6 0 V - 1 0 0V • rD S on = 0 .0 5 5 H an d 0 .0 8 0

IRFP 620

Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
Contextual Info: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V

power supply CIRCUIT DIAGRAM irfp 460 a

Abstract: IRFP460 SWITCHING FREQUENCY IRFP460 equivalent SCHEMATIC WITH irfp460 IRFP equivalent
Contextual Info: J U-118 U IM IT R O D E APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. A B STR A C T Although touted as a high impedance, voltage controlled device,

IRF9120

Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Contextual Info: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET

diode 4483

Abstract: IRFP150R irfp 350 n 4484 MOSfet
Contextual Info: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*

IRFP150

Abstract: IRFP RE 40
Contextual Info: H a r r IRFP150, IRFP151, IRFP152, IRFP153 i s S E M I C O N D U C T O R 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

RFP9240

Abstract: IRFP P CHANNEL MOSFET* 100v
Contextual Info: HARRIS SEMICOND SECTOR 23 H a r r i s IHAS M302271 DDBSSÖS 3 4QE D IMFP9240R/P9241R IRFP9242R/P9243R Avalanche Energy Rated -Channel Power MOSFETs August 1991 Features Package TO-247 TOP VIEW • -10 A and -12A, -20 0 V and -1S 0V • rDS ON = 0 .5 0 ii and 0 .7 fi

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

DM74367

Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Contextual Info: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,