IC11 Search Results

IXGH32N60C

Abstract: 32N60C IXGH32N60
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C

IXGH30N60B

Abstract: IXGT30N60B
Contextual Info: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms

SD card connector

Abstract: MCR102 connectors edge connector 22 pin SIM SOCKET CIRCULAR connector Memory Stick sd memory card socket DFS111-UL1979 MI20
Contextual Info: Memory Card 65 Memory Card Card Bus Connectors Type Series Name Page IC11S 67 Single slot FPC connection connectors for PC Card bus IC13 67 Card bus socket connectors IC9 68 Series Name Page Single slot through hole type connectors for PC card standard IC7

IXXH100N60B3

Abstract: 100n60
Contextual Info: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Circular Connectors Single slot SMT connectors for PC Card bus IC11S Series Features Rectangular Connectors ● Single slot SMT connectors for PC CardBus conforming to PC Card Standards. ● The smaller dimensions width and depth reduce the occupied area on

NE558

Abstract: NE558 applications NE558 pin configuration NE558D NE558N
Contextual Info: INTEGRATED CIRCUITS NE558 Quad timer Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data Quad timer NE558 DESCRIPTION PIN CONFIGURATION The NE558 Quad Timers are monolithic timing devices which can be

MEPCO

Abstract: philips components trimpot NE5539 NE5539D NE5539N SE5539 SE5539N SL00572 SL00579 cermet trimpot
Contextual Info: INTEGRATED CIRCUITS NE/SE5539 High frequency operational amplifier Product data Supersedes data of 1992 Apr 15 File under Integrated Circuits, IC11 Data Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data High frequency operational amplifier

IXGH72N60C3

Contextual Info: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient

IXBL64N250

Contextual Info: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXGK55N120A3H1

Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
Contextual Info: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

8-8NS

Contextual Info: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings

IXGR50N160H1

Contextual Info: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGN200N60B3

Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Contextual Info: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXBX64N250

Abstract: IC100 IXBK64N250 PLUS247
Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXYH82N120C3

Abstract: DS100335
Contextual Info: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

8n90c

Abstract: 8n90 IXYP8N90C3 IGBTS
Contextual Info: Advance Technical Information IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXYH50N120C3

Contextual Info: Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGJ50N60C4D1

Abstract: G50N60
Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

40N90C3D1

Contextual Info: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

ic1110-f128lq

Abstract: multi format card reader 80SM 80T32
Contextual Info: IC1110-F128LQ USB Flash Card Reader Controller 1. − FEATURES − High speed 8-bit micro-controller with 4 system clocks Master/Slave IIC and UART/RS-232 interface for external device communication. per machine cycle − − Instruction-set compatible with MCS-51

htrc110 PROTOCOL

Abstract: HT1ICS3002x HITAG command HITAG 2 PROTOCOL transponders philips htrc110 HTRC11001T HTRC110 manual hitag application note AN98080 HTRC11001T/03EE,118
Contextual Info: INTEGRATED CIRCUITS DATA SHEET HTRC11001T HITAG reader chip Product specification Supersedes data of 1999 Jan 01 File under Integrated Circuits, IC11 2001 Nov 23 Philips Semiconductors Product specification HITAG reader chip HTRC11001T CONTENTS 13 PACKAGE OUTLINE

EN 50065-1

Contextual Info: INTEGRATED CIRCUfTS EM M SInlEET TDA5051 Home automation modem P relim inary specification File under Integrated Circuits, IC11 Philips Semiconductors 1997 M ar 11 PHILIPS Philips S e m i c o n d u c t o r s Preliminary specification H o m e aut omat i on mo d e m

30N60B3D

Contextual Info: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M