IXGH60N60C3 Search Results

IXGH60N60C3 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGH60N60C3		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 380W TO247AD	Original	PDF		6
IXGH60N60C3D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 380W TO247AD	Original	PDF		7

IXGH60N60C3 Price and Stock

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IXYS Corporation


IXYS Corporation IXGH60N60C3 IGBT PT 600V 75A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH60N60C3	Tube			30	1 - 10 - 100 $4.76 1000 $4.76 10000 $4.76	Buy Now
IXYS Corporation IXGH60N60C3D1 IGBT PT 600V 75A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH60N60C3D1	Tube			1	1 $14.74 10 $14.74 100 $9.01 1000 $7.63 10000 $7.63	Buy Now
Mouser Electronics	IXGH60N60C3D1					1 $15.04 10 $10.54 100 $10.54 1000 $10.06 10000 $10.06	Get Quote
TTI	IXGH60N60C3D1	Tube	300		30	1 - 10 - 100 $10.17 1000 $10.17 10000 $10.17	Buy Now
TME	IXGH60N60C3D1				1	1 $13.91 10 $10.45 100 $9.68 1000 $9.68 10000 $9.68	Get Quote
New Advantage Corporation	IXGH60N60C3D1		180		1	1 - 10 - 100 $15.37 1000 $14.18 10000 $14.18	Buy Now
IXYS Corporation IXGH60N60C3D1 (GENX3 SERIES) Igbt, Single, 600V, 75A, To-247; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:380W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Ixys Semiconductor IXGH60N60C3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGH60N60C3D1 (GENX3 SERIES)	Bulk			1	1 $14.72 10 $10.49 100 $10.15 1000 $9.81 10000 $9.81	Buy Now

IXGH60N60C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGH60N60C3 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-247 AD (IXGH) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	40-100kHz IXGH60N60C3 IC110 O-247 60N60C3 02-12-08-B	PDF
Contextual Info: GenX3TM 600V IGBTs with Diode VCES IC110 VCE sat tfi (typ) IXGH60N60C3D1 IXGT60N60C3D1 High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGH60N60C3D1 IXGT60N60C3D1 40-100kHz O-247 IF110 60N60C3 01-15-10-E	PDF
ixgh60n60c3 Abstract: G60N60 G60N 60N60C3 siemens igbt inverters 02-23-09-D Contextual Info: IXGH60N60C3 GenX3TM C3-Class IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600	Original	IXGH60N60C3 IC110 40-100kHz O-247 60N60C3 02-23-09-D ixgh60n60c3 G60N60 G60N siemens igbt inverters 02-23-09-D	PDF
IXGH60N60C3D1 Abstract: G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60 Contextual Info: GenX3TM 600V IGBTs with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH60N60C3D1 IXGT60N60C3D1 IC110 40-100kHz O-247 IF110 60N60C3 01-15-10-E IXGH60N60C3D1 G60N60 g60n 01-15-10-E IXGT60N60C3D1 IF110 ixgh60	PDF
ixgh60n60c3 Abstract: G60N60 Contextual Info: IXGH60N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V	Original	IXGH60N60C3 IC110 40-100kHz O-247 60N60C3 01-15-10-E ixgh60n60c3 G60N60	PDF
Contextual Info: GenX3TM 600V IGBT VCES IC110 VCE sat tfi (typ) IXGH60N60C3 High Speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V	Original	IC110 IXGH60N60C3 40-100kHz O-247 60N60C3 01-15-10-E	PDF
G60N60 Abstract: ixgh60n60c3d1 IXGT60N60C3D1 g60n 60N60C3 Contextual Info: GenX3TM 600V IGBT with Diode IXGH60N60C3D1 IXGT60N60C3D1 VCES IC110 VCE sat tfi (typ) High Speed PT IGBTs for 40-100kHz switching = = ≤ = 600V 60A 2.5V 55ns TO-268 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH60N60C3D1 IXGT60N60C3D1 IC110 40-100kHz O-268 G60N60 ixgh60n60c3d1 IXGT60N60C3D1 g60n 60N60C3	PDF
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Contextual Info: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter	PDF