Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT8G103 Search Results

    GT8G103 Datasheets (4)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GT8G103
    Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT8G103
    Toshiba Discrete IGBTs Original PDF 539.84KB 16
    GT8G103
    Toshiba Silicon N-channel MOS type insulated gate bipolar transistor for strobe flash applications Original PDF 359.42KB 5
    GT8G103
    Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF 218.27KB 4
    SF Impression Pixel

    GT8G103 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components GT8G103Q

    Insulated Gate Bipolar Transistor, 8A I(C), 400V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA GT8G103Q 1,345
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote