GT35 Search Results

GT3585

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and

Contextual Info: GT35MR21 Discrete IGBTs Silicon N-Channel IGBT GT35MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

GT35MR21

Contextual Info: GT35MR21 Discrete IGBTs Silicon N-Channel IGBT GT35MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

GT3528

Abstract: GT3528/L2C-B50634C6CB2/2T GT3528-L2C GT3528/L2C-B50634C6CB2 GT3528-Q2C 4234 GT3528/Q2C b4556 in 4436
Contextual Info: Technical Data Sheet Top View LEDs GT3528/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3528 has wide

gt35j321

Contextual Info: GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications Unit: mm Enhancement mode High speed: tf = 0.19 s typ. (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A)

GT3528

Abstract: GT3528-L2C GT3528/L2C-B50634C6CB2 GT3528/L2C-B50634C6CB2/2T X2C-BXXXXXXXXX
Contextual Info: Technical Data Sheet Top View LEDs GT3528/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3528 has wide

Contextual Info: Technical Data Sheet Top View LEDs GT3528/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3528 has wide

GT35J321

Abstract: gt35j321 data gt35j
Contextual Info: GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z Enhancement mode z High speed: tf = 0.19 s typ. (IC = 50 A) z Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A)

GT35J321

Abstract: DT3001 IC860 gt35j
Contextual Info: GT35J321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT35J321 ○ 第 4 世代 ○ 電流共振インバータスイッチング用 • • • • • 単位: mm 取り扱いが簡単なエンハンスメントタイプです。

Contextual Info: GT35MR21 Discrete IGBTs Silicon N-Channel IGBT GT35MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

R2A25416SP

Abstract: SH7777 Renesas SH72546 Renesas SH72543 SH72544 car ECU training sh72543 R5E72546RKBG SH 72546 Wiring Diagram of NIPPON car center lock system
Contextual Info: 2009.10 Renesas Automotive www.renesas.com Introduction 1 Introduction 1 Imagination to Realize. Renesas Automotive Automotive Semiconductor Devices for the Future of Car Electronics The wider use of electronics in motor vehicles brings new requirements for automotive semiconductor devices.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT50

Abstract: GT-32 triangle KDI TO-30D GT40 kdi switch GT35 GT30 GT-29
Contextual Info: CURRENT CONTROLLED ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE SERIES GT 0.25-18 GHz GENERAL INFORMATION: KDI/Triangle's pin diode attenu­ ators continuously change the amplitude o f a microwave sig­ nal by applying a varying current. A matched configuration

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: Device Under Test: 90HBW08PT, 90HBW10PT, 90B08ST, 90B05ST, 90B10ST Environmental Test: Thermal Shock, Moisture resistance, Thermal aging, Resistance to Reflow Physical Test: Mechanical Life, Mechanical shock, Vibration Resistance, Terminal Strength Flammability, Solderability, Process seal

tb6584

Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
Contextual Info: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

SJV50

Abstract: wpce773 G9091-330T11U-GP winbond WPCE773 G7922R61U N10M-GE1 WISTRON power sequence M08B1 DT2 UMA isl88731
Contextual Info: 5 D 4 3 2 1 SYSTEM DC/DC Project code: 91.4BU01.001 PCB P/N : 48.4BU01.0SB REVISION : 08244-SB SJV50 Block Diagram CLK GEN. ISL62392 INPUTS 41 OUTPUTS 5V_S5 6A DCBATOUT 3D3V_S5(7A) 5V_AUX_S5 3D3V_AUX_S5 GMT Mobile CPU G7922R61U Penryn ICS9LPRS365B 33 3 VRAM

R2A11301FT

Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Contextual Info: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV