GT40 Search Results

Contextual Info: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j | . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

GT40Q323

Contextual Info: GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector

Contextual Info: GT40J325 Discrete IGBTs Silicon N-Channel IGBT GT40J325 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

GT40J121

Contextual Info: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)

VS-GT400TH120N

Contextual Info: VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient

Contextual Info: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)

GT40G121

Contextual Info: GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs Typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (Typ.) (IC = 60 A)

GT40M301

Abstract: ED 05 Diode
Contextual Info: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25^s TYP.

Parallel resonance inverter

Abstract: TOSHIBA IGBT DATA BOOK GT40T301 GT40
Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)

Contextual Info: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

Contextual Info: GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

Contextual Info: GT40RR21 Discrete IGBTs Silicon N-Channel IGBT GT40RR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

GT40T102

Contextual Info: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)

GT40Q322

Contextual Info: GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT40Q322 Preliminary Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed : tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector

Parallel resonance inverter

Abstract: GT40T302
Contextual Info: GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 s typ. (IC = 40 A)

GT40J322

Abstract: ic MARKING QG 40J322
Contextual Info: GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.20 s typ. (IC = 40 A)

Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

GT40

Contextual Info: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE fiTJil M 301 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode • H ig h s p e e d IG B T : t f = 0 .25^8 TYP.

Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)

VQE 24

Abstract: GT40M101
Contextual Info: GT40M101 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf^ O .^ s Max. Low Saturation Voltage : V C E (sa t)~ 3 .4 V (Max.) Enhancement-Mode

IEGT

Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter
Contextual Info: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)

40t321

Abstract: GT40T321 gt40t
Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed

GT40M101

Abstract: 216F
Contextual Info: GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed Low saturation voltage : tf = 0.4µs Max. : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25°C)