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GT40T Datasheets (12)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GT40T101	Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16
GT40T101	Toshiba	N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)	Original	PDF	336.68KB	5
GT40T101	Toshiba	Discrete IGBTs	Original	PDF	586.27KB	15
GT40T101	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel MOS Type	Scan	PDF	208.91KB	3
GT40T301	Toshiba	TRANS IGBT CHIP N-CH 1500V 40A 3(2-21F2C)	Original	PDF	190.7KB	6
GT40T301	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Original	PDF	314.82KB	6
GT40T301	Toshiba		Original	PDF	281.67KB	5
GT40T301	Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16
GT40T301	Toshiba	Discrete IGBTs	Original	PDF	586.27KB	15
GT40T301(Q)	Toshiba	TRANS IGBT CHIP N-CH 1500V 40A 3(2-21F2C)	Original	PDF	190.71KB	6
GT40T321	Toshiba	GT40T321 - TRANSISTOR 40 A, 1500 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor	Original	PDF	204.19KB	6
GT40TF	Amphenol	Connector Accessories Clamp	Original	PDF	30.65KB	1

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Amphenol Industrial Operations GT40TF Connector Cap (Cover) for GT00 01 02 020 030 070 Receptacles - Shell Size 40 - Metal Chain - Cadmium - Olive Drab.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	GT40TF					1 $59.34 10 $59.05 100 $44.77 1000 $44.77 10000 $44.77	Buy Now
Newark	GT40TF	Bulk			25	1 - 10 - 100 $64.52 1000 $62.67 10000 $62.67	Buy Now
RS	GT40TF	Bulk		19 Weeks	25	1 - 10 - 100 $65.10 1000 $65.10 10000 $65.10	Get Quote
Onlinecomponents.com	GT40TF		8			1 $59.34 10 $59.05 100 $44.77 1000 $44.77 10000 $44.77	Buy Now
Amphenol Corporation GT40TV Dust Cap / Cover, Plug, Size 40, Dust Cap, Amphenol's GT Series, Metal Body, GT - Bulk (Alt: GT40TV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GT40TV	Bulk		16 Weeks	25	1 - 10 - 100 $44.87 1000 $44.41 10000 $44.41	Buy Now
Amphenol Corporation GT40TF Dust Cap / Cover, Receptacle, Size 40, Dust Cap, Amphenol's GT Series, Metal Body, GT - Bulk (Alt: GT40TF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GT40TF	Bulk		16 Weeks	25	1 - 10 - 100 $43.14 1000 $42.70 10000 $42.70	Buy Now
Amphenol Industrial Operations GT40TV Dust Cap, Amphenol Industrial Gt40Tv; \|Amphenol Industrial GT40TV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GT40TV	Bulk			12	1 - 10 - 100 $55.46 1000 $53.87 10000 $53.87	Buy Now
RS	GT40TV	Bulk		19 Weeks	25	1 - 10 - 100 $67.21 1000 $67.21 10000 $67.21	Get Quote
Onlinecomponents.com	GT40TV					1 - 10 $59.77 100 $45.32 1000 $45.32 10000 $45.32	Buy Now
ROHM Semiconductor RGT40TS65DGC13 IGBTs TO247 650V 20A TRNCH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RGT40TS65DGC13	Tube			600	1 - 10 - 100 - 1000 $4.93 10000 $4.93	Buy Now
TME	RGT40TS65DGC13		30		24	1 - 10 - 100 $2.47 1000 $2.47 10000 $2.47	Buy Now
Ameya Holding Limited	RGT40TS65DGC13		30		1	1 $7.76 10 $7.02 100 $6.26 1000 $4.86 10000 $4.47	Buy Now

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GT40T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j \| . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	gt40t101 2-21f2c characteristicst40t101	PDF
Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)	Original	gt40t101 2-21f2c	PDF
Contextual Info: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)	OCR Scan	gt40t101	PDF
Parallel resonance inverter Abstract: TOSHIBA IGBT DATA BOOK GT40T301 GT40 Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	gt40t301 parallel resonance inverter toshiba igbt data book gt40	PDF
GT40T102 Contextual Info: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)	Original	gt40t102 2-21f2c	PDF
GT40T301 Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 40 A)	Original	gt40t301	PDF
Parallel resonance inverter Abstract: GT40T302 Contextual Info: GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 s typ. (IC = 40 A)	Original	gt40t302 parallel resonance inverter	PDF
Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	gt40t321	PDF
Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	gt40t301 2-21f2c	PDF
40t321 Abstract: GT40T321 gt40t Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	gt40t321 40t321 gt40t	PDF
GT40T301 Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	gt40t301	PDF
Contextual Info: TOSHIBA GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 U nit in mm HIGH POWER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf=0.4//s Max. (Iq = 40A) Low Saturation : (sat) = 5-0V (Max.) (Iq = 40A)	OCR Scan	gt40t101 2-21f2c 75grm	PDF
Gt40t101 Abstract: TF010 Contextual Info: TOSHIBA GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 Unit in mm HIGH POWER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf = 0.4 jus Max. (Iq = 40 A) Low Saturation : VQ3 (sat) = 5.0 V (Max.) (l£ = 40 A)	OCR Scan	gt40t101 2-21f2c tf010	PDF
GT40T302 Abstract: IC401 Contextual Info: GT40T302 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT40T302 ○ 並列共振スイッチング用単位: mm • 高速ダイオードを内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。	Original	gt40t302 2-21f2c 20070701-ja ic401	PDF

GT40T301 Abstract: MMA 200 IGBT Parallel resonance inverter Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	gt40t301 mma 200 igbt parallel resonance inverter	PDF
Contextual Info: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH PO W ER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)	OCR Scan	gt40t101 2-21f2c	PDF
gt40t101 Abstract: bipolar power transistor data toshiba 2-21F2C Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement−Mode High Speed : tf = 0.4 µs Max. (IC = 40 A) Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)	Original	gt40t101 2-21f2c bipolar power transistor data toshiba	PDF
40t321 Abstract: GT40T321 ic401 Contextual Info: GT40T321 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT40T321 ○ 民生用 ○ 電圧共振インバータスイッチング専用 ○ 第６世代単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。	Original	gt40t321 2-16c1c 40t321 ic401	PDF
Contextual Info: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT40T301 High Power Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)	Original	gt40t301	PDF
Gt40t101 Abstract: 2-21F2C Contextual Info: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf=0.4^s Max. (l£ = 40A) Low Saturation : ( s a t ) “ 5.0V (Max.) (l£ = 40A)	OCR Scan	gt40t101 2-21f2c	PDF
gt40t101 Abstract: 030619EAA Contextual Info: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement mode type High speed : tf = 0.4 µs Max. (IC = 40 A) Low saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)	Original	gt40t101 2-21f2c 030619eaa	PDF
GT40T321 Contextual Info: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	gt40t321	PDF
Contextual Info: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)	Original	gt40t102 2-21f2c	PDF
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	200-v 400j101h mg75j1bs11 mg25j1b511 +16mg50j1bs11 mg100j1bs11 mg150j1bs11 mg25q1bs11 mg50q1bs11 mg75q1bs11 s5j53 mig30j103h 200j2 s5j25 mg7502ys mg150j1js50 mig100q201h gt60m301 mig30j103hb mp6753	PDF

GT40T Search Results

GT40T Datasheets (12)

GT40T Price and Stock

Amphenol Industrial Operations GT40TF

Amphenol Corporation GT40TV

Amphenol Corporation GT40TF

Amphenol Industrial Operations GT40TV

ROHM Semiconductor RGT40TS65DGC13

GT40T Datasheets Context Search

Parallel resonance inverter

GT40T102

GT40T301

Parallel resonance inverter

40t321

GT40T301

Gt40t101

GT40T302

GT40T301

gt40t101

40t321

Gt40t101

gt40t101

GT40T321

S5J53