S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-v400j101hmg75j1bs11mg25j1b511+16mg50j1bs11mg100j1bs11mg150j1bs11mg25q1bs11mg50q1bs11mg75q1bs11s5j53mig30j103h200j2s5j25mg7502ysmg150j1js50mig100q201hgt60m301mig30j103hbmp6753
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