GT50 Search Results

GT50J102

Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.

gt50j

Contextual Info: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2

gt50j341

Contextual Info: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)

Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50MR21

Abstract: IGBT application notes
Contextual Info: GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

gt50nr21

Abstract: gt50n
Contextual Info: GT50NR21 Discrete IGBTs Silicon N-Channel IGBT GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)

Contextual Info: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 • 電流共振インバータスイッチング専用 注意:本資料に掲載されている製品を上記以外の用途に使用しないでください。 2. 特長

Contextual Info: GT50J342 ディスクリートIGBT シリコンNチャネルIGBT GT50J342 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 50 A) (3) 接合温度が高い: Tj = 175 (最大) (4)

GT50J301

Abstract: bipolar power transistor data toshiba set igbt on off Vge
Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

GT50J325

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50J121

Abstract: GT50J325
Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT50G102

Abstract: P channel 50A IGBT
Contextual Info: GT50G102 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TYPE STROBE FLASH APPLICATIONS Unit in mm 15.9 MAX, . High Input Impedance . High Speed 03.2±O.2 : tf=l.3 Js(Typ. . Low Saturation Voltage: VcE(sat)=4.0V(Max.)(Ic=50A) . Enhancement-Mode . Recommended Cm =650 h F

GT50J322

Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)

GT50J325

Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • The 4th generation · Enhancement-mode · Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

gt50j322

Contextual Info: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)

50J328

Abstract: GT50J328 TF01S
Contextual Info: GT50J328 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J328 単位 : mm ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 z 取り扱いが簡単なエンハンスメントタイプです。

GT50J301

Contextual Info: GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)

GT50J325

Contextual Info: GT50J325 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J325 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ

IC-50A

Abstract: GT50J322 2-21F2C
Contextual Info: GT50J322 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J322 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf=0.25 s 標準 (IC=50A)

GT50J121

Abstract: GT50J325
Contextual Info: GT50J121 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J121 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ

Contextual Info: GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) Sixth generation (2)

gt50j325

Abstract: GT50J325 Toshiba
Contextual Info: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications • Fourth generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT5010

Abstract: 457789 GTran SONET/OC-192 B102 STM-64
Contextual Info: Description The GT5010 is a high performance SiGe 12.5GB/s transimpedance amplifier IC designed for use in receiver modules for fiber optic transmission systems such as SDH STM-64 and SONET OC-192. It is also suitable for 12.5 Gb/s dual forward error correction

GT50JR21

Contextual Info: GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)