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    GT50J Search Results

    GT50J Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J341
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) Datasheet
    GT50J123
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT50JR21
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) Datasheet
    GT50JR22
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 50 A, Built-in Diodes, TO-3P(N) Datasheet

    GT50J Datasheets (45)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GT50J101
    Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT50J101
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 53.63KB 1
    GT50J101
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 55.62KB 1
    GT50J101
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.73KB 1
    GT50J101
    Toshiba TRANSISTOR IGBT 50A 600V Scan PDF 224.23KB 3
    GT50J102
    Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT50J102
    Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Original PDF 388.38KB 6
    GT50J102
    Toshiba Discrete IGBTs Original PDF 539.84KB 16
    GT50J102
    Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF 256.03KB 5
    GT50J121
    Toshiba Original PDF 322.84KB 6
    GT50J121
    Toshiba High-Speed IGBTs Original PDF 117.47KB 8
    GT50J121
    Toshiba Discrete IGBTs Original PDF 539.84KB 16
    GT50J121
    Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF 206.22KB 6
    GT50J121(Q)
    Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 240W TO3P LH Original PDF 6
    GT50J122
    Toshiba N-channel IGBT Original PDF 177.28KB 6
    GT50J122
    Toshiba Discrete IGBTs Original PDF 539.84KB 16
    GT50J301
    Toshiba TRANS IGBT CHIP N-CH 600V 50A 3(2-21F2C) Original PDF 390.88KB 6
    GT50J301
    Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Original PDF 396.71KB 6
    GT50J301
    Toshiba Discrete IGBTs Original PDF 539.84KB 16
    GT50J301
    Toshiba Discrete IGBTs Original PDF 586.27KB 15
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    GT50J Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components GT50J341,Q

    - Trays (Alt: GT50J341,Q)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GT50J341,Q Tray 100
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    Mouser Electronics GT50J341,Q
    • 1 $4.90
    • 10 $3.24
    • 100 $2.88
    • 1000 $2.55
    • 10000 $2.48
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    Vyrian GT50J341,Q 13,456
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    Toshiba America Electronic Components GT50JR21(STA1,E,S)

    IGBTs - Trays (Alt: GT50JR21(STA1,E,S))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GT50JR21(STA1,E,S) Tray 12 Weeks 25
    • 1 -
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    • 100 $2.60
    • 1000 $2.16
    • 10000 $2.16
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    Mouser Electronics GT50JR21(STA1,E,S) 47
    • 1 $5.97
    • 10 $3.60
    • 100 $3.60
    • 1000 $3.60
    • 10000 $3.60
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    TME GT50JR21(STA1,E,S) 83 1
    • 1 $5.49
    • 10 $3.28
    • 100 $3.15
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    EBV Elektronik GT50JR21(STA1,E,S) 150 21 Weeks 25
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    Toshiba America Electronic Components GT50JR22(STA1,E,S)

    TOSGT50JR22(STA1ES) IGBT FOR SOFT SWIT - Trays (Alt: GT50JR22(STA1,E,S))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GT50JR22(STA1,E,S) Tray 12 Weeks 25
    • 1 -
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    • 100 $2.60
    • 1000 $2.16
    • 10000 $2.16
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    Mouser Electronics GT50JR22(STA1,E,S) 69
    • 1 $5.97
    • 10 $4.16
    • 100 $3.60
    • 1000 $3.60
    • 10000 $3.60
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    Newark GT50JR22(STA1,E,S) Bulk 350 1
    • 1 $7.31
    • 10 $5.99
    • 100 $4.02
    • 1000 $3.51
    • 10000 $3.51
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    TME GT50JR22(STA1,E,S) 86 1
    • 1 $6.00
    • 10 $4.08
    • 100 $3.09
    • 1000 $3.09
    • 10000 $3.09
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    EBV Elektronik GT50JR22(STA1,E,S) 25 21 Weeks 25
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    Toshiba America Electronic Components GT50J325

    IGBT, 600V, TO-3P(LH); Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:240W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark GT50J325 Bulk 1
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    Toshiba America Electronic Components GT50JR21STA1ES

    SILICON N-CHANNEL DISCRETE IGBT Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA GT50JR21STA1ES 150
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