MG75J2YS50 Search Results

MG75J2YS50

Abstract: Toshiba transistor Ic 100A diode bridge toshiba toshiba mg75j2ys50
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 0.30µs Max. (IC = 75A) trr = 0.15µs (Max.) (IF = 75A)

MG75J2YS50

Contextual Info: MG75J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.

toshiba mg75j2ys50

Abstract: MG75J2YS50
Contextual Info: TOSHIBA MG75J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. U n it in mm MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B #110 The Electrodes are Isolated from Case. H igh In p u t Impedance, Includes a Complete H a lf Bridge in One

Contextual Info: T O SH IB A MG75J2YS50 MG 7 5 J 2 YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One

Contextual Info: MG75J2YS50 HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L APPLICA TIO N S. • • • • • • The Electrodes are Isolated from Case. H igh In p ut Im pedance. Includes a Com plete H alf Bridge in One Package. Enhancem ent-M ode.

toshiba mg75j2ys50

Abstract: MG75J2YS50
Contextual Info: TOSHIBA MG75J2YS50 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG75J2YS50 HIGH P O W E R SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete H alf Bridge in One

Contextual Info: T O SH IB A MG75J2YS50 MG 7 5 J 2 YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One

Contextual Info: MG75J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode.

4A05 diode

Abstract: MG75J2YS50 ct 4a05 toshiba mg75j2ys50 MG75J MG75J2 100/diode 4a05
Contextual Info: TOSHIBA MG75J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One Package. Enhancement-Mode.

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

MG50Q6ES41

Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
Contextual Info: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750

MG50Q6es41

Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
Contextual Info: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752

mg500q1us1

Abstract: MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5
Contextual Info: .3 UL Approvals List All devices are included in: File number: . E87989 Section number: 4. 1700 V Types MG30V2YS40 . 80* MG90V2YS40 . 80*

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a