MG150Q2YS40 Search Results

MG150Q2YS40 Datasheets (4)

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Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MG150Q2YS40		Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications	Original	PDF	407.25KB	6
MG150Q2YS40		Toshiba	TRANS IGBT MODULE N-CH 1200V 150A 7(2-109C1A)	Scan	PDF	256.68KB	5
MG150Q2YS40		Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF	256.68KB	5
MG150Q2YS40		Toshiba	GTR Module Silicon N-Channel IGBT	Scan	PDF	345.53KB	6

MG150Q2YS40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MG150Q2YS40 Abstract: CV200 Contextual Info: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)	OCR Scan	MG150Q2YS40 2-109C1A MG150Q2YS40 CV200	PDF
MG150 Abstract: MG150Q2YS40 56i2 Contextual Info: TOSHIBA MG150Q2YS40 MG1 50Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4-FAST-on-Tab# 110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)	OCR Scan	MG150Q2YS40 02YS40 MG150 MG150Q2YS40 56i2	PDF
MG150Q2YS40 Contextual Info: MG150Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode	Original	MG150Q2YS40 2-109C1A MG150Q2YS40	PDF
50Q2 Contextual Info: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.	OCR Scan	MG150Q2YS40 50Q2YS40 2-109C1A 50Q2	PDF
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9	PDF
MG15J6ES40 Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40	OCR Scan	MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
MG200J2YS50 Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50 Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)	OCR Scan	flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF
GT80J101 Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5 Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412	OCR Scan	GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5	PDF
MG50Q6ES41 Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101 Contextual Info: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750	OCR Scan	GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1	PDF
MG50Q6es41 Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1 Contextual Info: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752	OCR Scan	GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1	PDF
MG200J2YS21 Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45 Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9	OCR Scan	MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45	PDF
MG150N2YS40 Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40 Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11	OCR Scan	T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40	PDF