toshiba mp6750
Abstract: MP6750 2-78A1A
Contextual Info: TOSHIBA MP6750 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6750 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : v CE sat = 4-o v (Max.) (Ie = 15A)
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mp67502-78a1a961001eaa2toshiba mp6750 |
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Contextual Info: T O SH IB A MP6750 MP6750 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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mp6750 |
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MP6750
Abstract: toshiba mp6750 toshiba motor
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35µs Max. (IC = 15A) trr = 0.15µs (Max.) (IC = 15A)
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mp6750pw03010796toshiba mp6750toshiba motor |
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zs transistor
Contextual Info: TOSHIBA MP6750 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M p fi 7 ç n Unit in mm HIGH POWER SWITCHING APPLICATIONS 05.7 + 0.2 MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package, • Enhancement-Mode
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mp67502-78a1azs transistor |
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Contextual Info: MP6750 HIGH P O W E R SW ITCH IN G APPLICATIONS. M O T O R C O N TRO L APPLICATIONS. • • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage : V c e »at =4.0V (Max.) (Iq = I5A)
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mp6750 |
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toshiba mp6750
Contextual Info: T O SH IB A MP6750 MP6750 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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mp6750961001eaa2toshiba mp6750 |
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MG50Q6ES41
Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
Contextual Info: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750
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gt15j101mg25j1bs11mg50j1bs11mg50j1e1s11+11mg75j1bs11gt15q101gt25q101mg50q6es41mg8qes42mg200q2ys11mg75q2ys1mg100q2ys42mp6750mg100q2ys11mg300j1us1
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MP6750
Abstract: toshiba mp6750 2-78A1A DC MOTOR speed control
Contextual Info: MP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l 6 IGBTs are built into 1 package. l Enhancement-mode l Low saturation voltage : VCE sat = 4.0V (Max) (IC = 15A)
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mp67502-78a1a000707eaa2toshiba mp6750+1dc motor speed control
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MP6750
Abstract: 2-78A1A GE semiconductor data handbook toshiba Igbts toshiba mp6750
Contextual Info: MP6750 TOSHIBA GTR Module Silicon N Channel IGBT MP6750 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE sat = 4.0V (Max) (IC = 15A)
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mp67502-78a1a000707eaa2utili50a+3ge semiconductor data handbooktoshiba igbtstoshiba mp6750
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toshiba mp6750
Abstract: mp6750
Contextual Info: TOSHIBA MP6750 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6750 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage : v CE sat = 4-o v (Max.) (Iç; = 15A)
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mp675035/is15//stoshiba mp6750 |
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-v400j101hmg75j1bs11mg25j1b511+16mg50j1bs11mg100j1bs11mg150j1bs11mg25q1bs11mg50q1bs11mg75q1bs11s5j53mig30j103h200j2s5j25mg7502ysmg150j1js50mig100q201hgt60m301mig30j103hbmp6753
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99a1a2-99b1agt250101mg150j2ys40+8mg75q2ys11mg400q1us11mg200q1js9mg75j2ys40mg50j6es40mg200q2ys91mg75j6es40mg100q2ys9
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MG40001US41
Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50
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mg400j1us51mg800j1us51mg300j1us51mg40j2ys50+13mg75j2ys50mg100j2ys50mg150j2ys50mg200j2ys50mg400j2vs50mg2sj6es40mg40001us41mg806es42mg15j6es40mg100q2ys42mg300q1us41mg50q2ys40mg150j1
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入
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050106daa1/sc-70ytf6122sk2381+15ytf8412sk2387ytf4422sk2149ytf613toshiba mg150n2ys40mg75n2ys40mg15n6es42mg150n2ys402sk150atoshiba s2530a2sk270amg8n6es42mg15g1al2mg75j2ys40
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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gt10g101gt10j301gt10j311gt10q301+15gt10qgt15g101gt15j101gt15j102gt15j103gt15q101g50q2ys40mg8q6es42gt8q102mg300q1us41gt60m301mig50j904hmig30j103hmg25q6es50amg150q1js
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TLP250
Abstract: TLP2501 MP6750 TLP251 mg15j6es40 2SK529 TLP251-2 TLP190B TLP250 mosfet TLP557
Contextual Info: [8] 1.5 解 説 フォトボルカプラ TLP590B 、TLP190B シリーズ パワーMOS FET は、従来のサイリスタやパワートランジスタと比較してスイッチング速度が速く、オ ン抵抗が小さいことなどにより、新たな電力制御素子として近年急速に市場を拡大しています。しかし、
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tlp590btlp190btlp590btlp591btlp190b+10tlp191btlp250tlp2501mp6750tlp251mg15j6es402sk529tlp251-2tlp250 mosfettlp557
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tbf819
Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種
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04az302cz31sv1861sv245+152sc239105az31sv2041sv2162sc2483tbf819mg50g2cl4mg30t1al1gt60j1012sd1678ths102amg60m1al1mg150n2ck1ytf541ths106a
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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mg800j2ys50amg300j1us51mg400j1us51mg50j2ys50+14mg75j2ys50mg100j2ys50mg150j2ys50mg200j2ys50mg300j2ys50mg100j7ks50gt30j322mp6750mg200q2ys40mg100q2ys42gt60m301gt60n321igbt gt20d201mig75q7csa0x
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MG50Q6es41
Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
Contextual Info: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752
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gt15j101mg25j1bs11mg50j1bs11mg75j1bs11+12mp6750mp6752mg25j6es40mg50q6es41mg8qes42mg75q2ys11mg25q6es42mg100q2ys42mg300q1us41mg300q2ysmg50q1bs1mg150q2ys1
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MG200J2YS21
Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9
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mg100j1bs11mg100j2ys1mg100j2ys9mg100j2ys40+14mg100j2ys91mg100j6es1mg100j6es40mg100j6es45mg100j6es91mg100m2yk1mg200j2ys21mg30j6es1mg400j1us11mg75j2ys40mg400q1us11mg150j2ys40mig25q901mg75j2ys45
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MG150N2YS40
Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11
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t8j101t8j102t15j101t15j102+16gt15j103t25j101mg25j1bs11t50j101t60j10180j101mg150n2ys40mg100j2ys45mg75j2ys40mg150j2ys40mg15n6es42mg100g2ys1mg75n2ys40mg25n2ys40mg200j2ys40mg50j6es40
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mg500q1us1
Abstract: MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5
Contextual Info: .3 UL Approvals List All devices are included in: File number: . E87989 Section number: 4. 1700 V Types MG30V2YS40 . 80* MG90V2YS40 . 80*
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e87989mg50j2ys50mg50j6fmg75j2ys50+14mg75j6es50mg100j2ys50mg100j6es50mg150j2ys50mg200j2ys50mg7sq2ys40mg500q1us1mg300q1us41mg400q1us41mg25q2ys40mg100q2ys42mig20j901hmg50q2ys40mg100j6es5
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mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入
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050106daa1ytf8422sk2387ytf441+152sk2149ytf6132sk2381ytf843ytf442mg75n2ys402n3055 toshibamg150n2ys40tlr103toshiba 2n3055mg15n6es422sk150atoshiba mg150n2ys402sk270as2530a
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Sine wave PWM DC to AC Inverter ics
Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
Contextual Info: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package
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ta7326pta7326fta7327ptb1004af+15tb1010ftb1012ftb1022fssop10gt60m303sine wave pwm dc to ac inverter icsuln2803 pin configurationta8316stc9653anhigh voltage diode for microwave ovensta7606pinduction heating ta8316stlp250 low side pwm driverrelay driver ic uln28032sk3201
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