000707EAA2 Search Results

Contextual Info: S−AV17 TOSHIBA RF POWER AMPLIFIER MODULE S−AV17 VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VCC 16 V DC Supply Voltage VCON 16 V Total Current IT 14 A

JDV2S09S

Contextual Info: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

MG90V2YS40

Abstract: General Instruments Bridge
Contextual Info: MG90V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG90V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

MG240V1US41

Contextual Info: MG240V1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case High input impedance Enhancement-mode High speed : tf = 1.5µs Max. (IC = 240A) trr = 0.6µs (Max.)(IF = 240A)

CMS07

Contextual Info: CMS07 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS07 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward Voltage: VFM = 0.45 V max Average Forward Current: IF (AV) = 2.0 A Repetitive Peak Reverse Voltage: VRRM = 30 V

1S1830

Abstract: 1S1885 1S1888 88 diode toshiba 1S1887
Contextual Info: 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Silicon Diffused Type 1S1830, 1S1885, 1S1887, 1S1888 General Purpose Rectifier Applications • • Average Forward Current: IF AV = 1.0 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V, 1000 V

MG50J2YS50

Abstract: td 4950
Contextual Info: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.

CMS03

Contextual Info: CMS03 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS03 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.45 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V

JDV2S02S

Contextual Info: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

diode bridge toshiba

Abstract: MG120V2YS40
Contextual Info: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

TOSHIBA RF Power Module

Contextual Info: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power

MG150J2YS50

Abstract: mg150j2y diode bridge toshiba MG150J2YS IGBT MG150J2YS50
Contextual Info: MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode

RN1961FE

Abstract: RN1962FE RN1963FE RN1964FE RN1965FE RN1966FE RN2961FE RN2966FE all type transistor equivalent
Contextual Info: RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1961FE, RN1962FE, RN1963FE RN1964FE, RN1965FE, RN1966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

CMS01

Contextual Info: CMS01 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS01 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.37 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V

1R5BZ41

Abstract: 1R5GZ41
Contextual Info: 1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5BZ41, 1R5GZ41 General Purpose Rectifier Applications • Average Forward Current: IF AV = 1.5 A (Ta = 35°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400 V • Peak One Cycle Surge Forward Current (non repetitive): IFSM = 150 A

Contextual Info: 1SV322 TOSHIBA 1 S V3 2 2 TOSHIBA DIODE T C X O /V C O • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C i V /C 4V = 4.3 Typ. : rs = 0.4 O (Typ.) Low Series Resistance Useful for Small Size Tuner. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA 5FWJ2CZ47M TO S H IB A SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 5FWJ2CZ47M SW ITCHING TYPE POWER SUPPLY A PP LIC A TIO N U n it in mm 10.3MAX. CONVERTER & CHOPPER APP LIC A TIO N • Repetitive Peak Reverse Voltage • Average Output Rectified Current : I q = 5A

JDV2S06S

Contextual Info: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S10S

Contextual Info: JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio • High Capacitance Ratio : C0.5V/C2.5V = 2.5 typ. • Low Series Resistance : rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

1SV281

Abstract: 303E toshiba 27c
Contextual Info: 1SV281 TOSHIBA TO S H IB A V AR IA B LE CAPACITAN CE DIODE SILICON EPITAX IAL P LAN AR TYPE 1 SV281 VCO FOR V / U H F B A N D R AD IO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner.

1SV282

Abstract: C25V
Contextual Info: TO SH IBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 2 CATV TUNING • Unit in mm High Capacitance Ratio : C2V/C25V = 12.5 TYP. 0.6 ± 0.1 ÍN O • Low Series Resistance : rs = 0 .6 0 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: TOSHIBA U1FWJ44N TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U1FWJ44N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Low Forward Voltage : V f M ~ 0.37V Max. Average Forward Current : Ijr (AV)= 1-0A Repetitive Peak Reverse Voltage : V r r m = 30 V

mark 1FL

Contextual Info: TO SH IBA U1FWJ44L TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U1FWJ44L Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Low Forward Voltage : V f M ~ 0.40V Max. Average Forward Current : Ijr (AV)= 1-0A Repetitive Peak Reverse Voltage : V r r m = 30V

Contextual Info: TO SH IBA 30GWJ2C48C,U30GWJ2C48C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30GWJ2C48C, U30GWJ2C48C SWITCHING TYPE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION • • • Repetitive Peak Reverse Voltage : V r r m = 40V Average Output Rectified Current : Iq = 30A