GT10Q301 Search Results
GT10Q301 Datasheets (5)
Toshiba
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT10Q301 |
|
Discrete IGBTs | Original | 539.84KB | 16 | ||
| GT10Q301 |
|
Discrete IGBTs | Original | 586.27KB | 15 | ||
| GT10Q301 |
|
TRANS IGBT CHIP N-CH 1200V 10A 3(2-16C1C) | Original | 196.21KB | 7 | ||
| GT10Q301 |
|
Scan | 325.25KB | 7 | |||
| GT10Q301 |
|
SILICON N CHANNEL IGBT | Scan | 325.11KB | 7 |
GT10Q301 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components GT10Q301QSILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
GT10Q301Q | 100 |
|
Get Quote | |||||||