GT10J301 Search Results
GT10J301 Datasheets (6)
Toshiba
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT10J301 |
|
N-channel iso-gate bipolar transistor (MOS technology) | Original | 267.08KB | 7 | ||
| GT10J301 |
|
Discrete IGBTs | Original | 586.27KB | 15 | ||
| GT10J301 |
|
Discrete IGBTs | Original | 539.84KB | 16 | ||
| GT10J301 |
|
Silicon N-channel IGBT insulated gate bipolar transistorfor high power switching, motor control applications | Original | 475.98KB | 7 | ||
| GT10J301 |
|
IGBT Chip, N Channel, 600V, 2-16C1C, 3-Pin | Scan | 323.55KB | 6 | ||
| GT10J301 |
|
Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Scan | 323.55KB | 6 |