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    GT10J301 Search Results

    GT10J301 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT10J301 Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT10J301 Toshiba Discrete IGBTs Original PDF
    GT10J301 Toshiba Discrete IGBTs Original PDF
    GT10J301 Toshiba Silicon N-channel IGBT insulated gate bipolar transistorfor high power switching, motor control applications Original PDF
    GT10J301 Toshiba IGBT Chip, N Channel, 600V, 2-16C1C, 3-Pin Scan PDF
    GT10J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Scan PDF