GT15J102 Search Results

Contextual Info: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.

Contextual Info: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)

Contextual Info: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 1 5 J 1 SILICON N -CH ANN EL IGBT 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.

Contextual Info: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATINS • • • • 10 ± 0.3 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V^g (sat) “ 4.0V (Max.)

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

GT15J102

Abstract: 2-10R1C J102 RL-20 V100 Vgg-15 5-J04
Contextual Info: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATINS • • • • 10 ± 0.3 High Input Impedance High Speed : tf=0.35;i*s Max. Low Saturation Voltage : V^g (sat) “ 4.0V (Max.)

MN3005

Contextual Info: GT15J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f 'W i • T ■ iM r vm ■m SILICON N-CHANNEL IGBT w ? Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 + 0.3 Collector Current Collector Power Dissipation Tc = 25°C

t15J102

Abstract: 2-10R1C GT15J102 V100
Contextual Info: TOSHIBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 02 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 . 3 I— • • • • High Input Impedance High Speed : tf=0.35/*s Max.

Contextual Info: TOSHIBA GT15J102 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL I6BT G T 1 5 J 1 02 HIGH PO W ER SWITCHING APPLICATIONS U n it in m m M O TO R CONTROL APPLICATIONS 10 tQ 3 jS3.2 ±0.2 2.7±0 2 of • H igh In p u t Im pedance • H ig h Speed

nsk dc motor

Contextual Info: TO SH IBA GT15J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS 10± 0.3 MOTOR CONTROL APPLICATINS • • • • ¿ 3-2 ± 0.2 2.710.2 High Input Impedance High Speed : tf=0.35;i*s Max.

Contextual Info: SILICON N CHANNEL IGBT GT15J102 H IG H P O W E R S W I T C H I N G A P P L I C A T I O N S . Unit MOTOR CONTROL APPLICATIONS. 1 0 ± 0.3 . High Input Impedance 0 3 .2 ± O .2 in mm 2.7 ± 0.2 m . High Speed : t f = 0 . 3 5 J s H a x .) . Low Saturation Voltage

Contextual Info: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

s5j53

Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬