V100 Search Results

ERF-150WJ401

Abstract: ERF-150WJ201 VZA40P7BAA ERF-150WJ301 ERF-150WJ751 A1000-FIV3010-SE A1000-FEV2102-RE A1000-FIV3010-RE a1000-cavpc232-ee A1000-REV00K4100-IE
Contextual Info: VZ V1000 More performance & Quality in less space • • • • • • • • • • • • • Current vector control High starting torque 200% / 0.5 Hz 1:100 speed control range Double rating ND 120%/1min and HD 150%/1 min IM&PM motor control Online Tuning

IN5468

Abstract: in547 IN5476 IN5475 IN5446 IN546 IN5451 IN5442 1N950 IN5472
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 Leakage Current >100 <10nA low Cost Comments <1.0M* Replaces M V 8 3 0 -M V 8 4 0 D O -7 G lass C V830CV840 X C V1006-16CV1106-16 X X C V 1 62 0CV1650

1N5718

Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf > 100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA < 1 .0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X

Contextual Info: V1000LB160B Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage1.0k V(DC) Max. Applied Voltage I(TM) Max.(A) Peak Current V(C) Nom. (V) Clamping Voltage @I(PP) (A) (Test Condition) W(TM) Max.(J) Transient Energy160

Contextual Info: V1000LA160B Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage1.6k V(RMS) Max. Applied Voltage1.0k V(DC) Max. Applied Voltage1.2k I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage2.42k @I(PP) (A) (Test Condition)100 W(TM) Max.(J) Transient Energy360

V1000LA160A

Contextual Info: V1000LA160A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage1.6k V(RMS) Max. Applied Voltage1.0k V(DC) Max. Applied Voltage1.2k I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage2.42k @I(PP) (A) (Test Condition)100 W(TM) Max.(J) Transient Energy360

Contextual Info: Part: V100ZA4P Series: ZA Series - Low to Medium Voltage Radial Leaded Varistor Technology:Metal Oxide Varistor PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Disc Diameter Size 10 Rated AC Voltage V MAC V 60 Continuous DC Voltage

Contextual Info: Part: V100RA8 Series: RA Series - Low Profile Varistor Technology:Metal Oxide Varistor PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Disc Diameter Size 8 Rated AC Voltage V MAC V 60 Continuous DC Voltage V MDC (V) 81.0 Maximum Non-Repetitive Surge Energy

Contextual Info: Part: V100ZA3 Series: ZA Series - Low to Medium Voltage Radial Leaded Varistor Technology:Metal Oxide Varistor PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Disc Diameter Size 7 Rated AC Voltage V MAC V 60 Continuous DC Voltage

Contextual Info: Part: V100ZU3 Series: ZA Series - Low to Medium Voltage Radial Leaded Varistor Technology:Metal Oxide Varistor PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Disc Diameter Size 7 Rated AC Voltage V MAC V 60 Continuous DC Voltage

XR-1468CN

Abstract: 1468CN XR-1488 Four Terminal Positive Voltage Regulators XR-494 XR1468CN Exar cross XR-1489AP XR-1488N XR-1488P
Contextual Info: E X AR CORP Tl D Ë | 3 M 22 blfl □ □ D 47 tfl 7 S 3422618 EXAR C ORP 9 1D XR-V100 Master-Chip Chip Size: 113 x 146 mils NPN Transistors Total Components: 740 Small Signal: 140 Bonding Pads: 28 Large: 4 Max. Operating Voltage: 36V PNP Transistors Lateral: 56

varistor 12 volt

Abstract: V1000LA160B
Contextual Info: Part: V1000LA160B Series: LA Series - Line Voltage Operation Radial Leaded Varistor Technology:Metal Oxide Varistor PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Disc Diameter Size 20 Rated AC Voltage V MAC V 1000 Continuous DC Voltage

Contextual Info: M O S E L V IT E L IC V100J9 and V100J8 1M X 9, 1M X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM MEMORY MODULE 60/60L 70/70L 80/80L Max. RAS Access Time, tRAf0 HIGH PERFORMANCE V100J8/9 60 ns 70 ns 80 ns Max. Column Address Access Time, (trA A 30 ns 35 ns 40 ns

Contextual Info: MT W VITELIC PRELIMINARY V100HJ8/9 1Mx8,1Mx9 CMOS MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V100H J8/9 Memory Module is organized as 1,048,576 x 8 (or 9) bits in a 30-lead single-in-line m odule. T he module contains up to 9 Vitelic

VZA40P7BAA

Abstract: VZA41P5BAA VZA22P2BAA VZA20P7BAA VZA20P4BAA VZA47P5FAA VZA43P0BAA VZA42P2BAA VZA21P5BAA VZA24P0BAA
Contextual Info: www.i-t.su info@i-t.su тел: 495 739-09-95, 739-09-96 Инверторы серии V1000 Инверторы серии V1000 позволяют управлять индукционными и синхронными двигателями. Характеризуются низким уровнем помех, низкой несущей

HLMA-VH00

Abstract: HLMA-VL00 HLMP-V100 HLMP-V500
Contextual Info: H T-1 3/4 5 mm , Wide Viewing Angle, High Intensity LED Lamps Technical Data HLMA-VH00 HLMA-VL00 HLMP-V100 HLMP-V500 Features Description • Outstanding LED Material Efficiency • Extremely Wide Horizontal Viewing Angle • High Light Output over a Wide Range of Currents

remote control door lock system

Abstract: 7 digit lock code V10013 KEYPAD 4 X 4 source code KEYPAD control relays DOOR Remote key relay power door varistor code list TB1 relay RS -24V RELAY
Contextual Info: V10013 Issued 02/2002 Programmable Access Keypad Instruction Leaflet Figures 1 3 Connecting a d.c. electric door lock to the keypad supply Connection terminals and allowed jumper positions This DIODE must be added Keypad Electric door lock 1 Power + Red LED control

EZJZ1V800AA

Abstract: EZJZ0V500AA EZJZ1V120KA EZJZ0V171AA EZJZ1V270GA EZJZSV800AA
Contextual Info: Multilayer Varistors “ EZJZ*V series ” Panasonic Electronic Devices Co., Ltd. To Suppress ESD and Protect from malfunction and/or breakdown Appearance ESD suppression Test Method : IEC61000-4-2 HBM : 8000V V [kV] 600 V10000 [kV] Features 6000 6 300 300

CV1620

Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces MV830-MV840 DO-7 Glass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X X Replaces MV1620-MV1650

HLMA-VH00

Abstract: HLMA-VL00 HLMP-V100 HLMP-V500
Contextual Info: H T-13/4 5 mm , Wide Viewing Angle, High Intensity LED Lamps HLMA-VH00 HLMA-VL00 HLMP-V100 HLMP-V500 Technical Data Features Description • Outstanding LED Material Efficiency • Extremely Wide Horizontal Viewing Angle • High Light Output over a Wide Range of Currents

eia marking code

Abstract: P54C-VRE
Contextual Info: MODEL 627 V100 Model 627 V100 Series Designed For Pentium Power Supply Surface Mount Resistor Networks Applications • Designed for P54C, P54C-VR and P54C-VRE Pentium® Processors when used in conjunction with Linear Technology Models LT 1266/1267 or LT 1584/1585

b72L

Contextual Info: O K I Semiconductor MSM51 V1000 1,048,576-Word x 1-Bit DYNAMIC RAM DESCRIPTION The V1000 is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the V1000 is OKI's CMOS silicon gate process technology.

Contextual Info: D Ë | 3M22blfl □□D47tfl 7 E X AR CORP Tl S 3422618 EXAR CORP 9 1D 0 4 7 6 8 XR-V100 Master-Chip Chip Size: 113 x 146 mils NPN Transistors Total Components: 740 Small Signal: 140 Bonding Pads: 28 Large: 4 Max. Operating Voltage: 36V PNP Transistors Lateral: 56

Standard Test Coil NARM RS-421-A

Abstract: HSR-1015 2c2120 V100 RS-421A HSR-1015R
Contextual Info: Click on the Part # to download the product data sheet detailed drawing is on data sheet . Miniature 101 1015 V100 301 302 510 520 522 CONFIGURATION SPST SPST SPST SPDT SPDT SPDT SPDT SPDT A-Nominal Overall Length 2.095 2.190 2.185 1.930 1.930 2.005 2.010