IN546 Search Results

in547

Abstract: in5448 IN5446 IN5450 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466
Contextual Info: SÔE D TELEDYNE COMPONENTS ö T lT b O S HIG H Q Q U O tiL iS Ü ì @ • 1N5441 THRU S IL IC O N V A R A C T R O N 1N5476 V O L T A G E -V A R IA B L E C A P A C IT A N C E DIO D ES GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN5461-76 B A N D C

IN5462

Contextual Info: 3 CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 • HIGH Q ~ ÌN5441 THRU 1N5476 S IL IC O N V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E O IO D ES JA N AND JAN -TX V ER S IO N A V A ILA B LE IN5461-76 B AND C • Q @ - 4 V D C , 5 0 M Hz to 6 0 0

IN5468

Abstract: in547 IN5476 IN5475 IN5446 IN546 IN5451 IN5442 1N950 IN5472
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 Leakage Current >100 <10nA low Cost Comments <1.0M* Replaces M V 8 3 0 -M V 8 4 0 D O -7 G lass C V830CV840 X C V1006-16CV1106-16 X X C V 1 62 0CV1650

IN5450

Abstract: IN5444 IN544 5lo300 IN5470 in5476
Contextual Info: FAI HO. ¡ ' S n 00000000000 - w - m f H IG H Q S IL IC O N V A R A C T R O N V O L T A G E ^ V A R !A B L E C A P A C IT A N C E D IO D E S GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN 546176 B A N D C > Q @ - 4 V t>C , 5 0 M H * to 6 0 0 • LOW LEAKAG E

minor project proposal on electronics

Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Contextual Info: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C

IN5148

Abstract: IN5139 IN5476 IN5441A IN546 1n5441 1N5461 1N5462 IN5456A IN5461A
Contextual Info: ALPHA IND/ SEMI CONDUCTOR 4ÔE D • DSÛ5443 DDD1 3 DS b07 ■ ALP VHF-UHF Abrupt Tuning Diodes Features ■ ■ ■ ■ ■ ■ High Q Large Tuning Range Standard Capacitance Tolerances -1 0 % , 5%, 2% Computer Matched for Tracking optional Low Leakage Current

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER TUNING RATIO C-2 V / C-30V MIN MAX CAPACITANCE @ - 4 Vdc • 1 MHz pF 2.5 2.5 2.6 2.6 MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz 3.1 3.1 450 450

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

DIODE 1N54

Abstract: IN5476A IN5140 IN5472A INS139 IN5148 IN6144 in647 IN5469A IN5441A
Contextual Info: LÔRAL/FREâUENCY/SENICOND E^ D • 557^51 7 *^ Û ? - / ? □□□OflDfl fl ■ JEDEC TUNING VARACTORS JEDEC REGISTERED FEATURES 1N 5139 , A through 1N 5148, A 1N 5441, A , B, C through 1N 5456, A , B, C 1N 54 6 1 , A , B, C through 1N 5476, A , B, C DO-7 Glass Package

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

1N5142

Abstract: 1N544 1N5140 IN5461 1N5466
Contextual Info: VHF-UHF Abrupt Tuning Diodes Features • ■ ■ ■ ■ ■ High Q Large Tuning Range Standard Capacitance Tolerances -1 0 % , 5%, 2% Computer Matched for Tracking optional Low Leakage Current Meet All M IL -S TD -750 Requirements Types ■ ■ 30 Volt Series

MC14516

Abstract: LT 7227 LA 7830 La 7833 case 751g of la 7830 pin MC14618 MC145160 MC145160DW tic145
Contextual Info: , . MOTOROLA SEMICONDUCTOR Order ttis dsts’ sheet by MC141WID ,. TECHNICAL DATA MC145160 MC145166 MC145167 Advance Information. Dual PLL For 46/49 MHz Cordless Telephones Siliccn=Gate CMOS These devices are dual phase-locked loop frequency ~,$ .+,)$, synthesizers intended for use primarily in 46/49 MHz cordless

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A