1N544 Search Results

1N5462

Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447

1N5456A

Abstract: motorola 986 1N5446ARL 1N5448ARL
Contextual Info: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,

1N5446A

Contextual Info: 1N5446A asii TUNING VARACTOR DESCRIPTION: The 1N5446A is a Silicon Abrupt Junction Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters MAXIMUM RATINGS VR 30 V If 100 mA Pd is s 400 mW @ Ta = 25 °C Tj -65 °C to +175 °C Ts t g -65 °C to +200 °C CHARACTERISTICS

1N5441

Abstract: 1n5445a
Contextual Info: MOTOROLA SEM ICONDUCTOR 1N5441A,B thru 1N5456A,B TECHNICAL DATA vvc V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S S IL IC O N EPICAP 6.8 - 1 0 0 pF 30 V O L T S D IO D E S . . . epitaxial passivated abrupt junction tuning diodes designed for

transistor equivalent 2n5551

Abstract: bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods.

4812b

Abstract: 44791 4810B
Contextual Info: VARACTOR TUNING DIODES 3E0EC Part Number Product Highlight* Figure Capacitance Maximum of Merit Capacitance at 4 0 V Ratio at VS=4 0 V W orking and f« l d MHz and $0 MHz J a v to v . „ V Voltage pF> 1(45439 1N5440 1N5441 1145442 1NS443 1(45444 1145445

IN5456A

Abstract: IN5456 IN5448A 1N5446ARL 1N5448ARL 1N5456A IN5446 A200 REACH in5448
Contextual Info: — MOTORO~ SEMICONDUCTOR o TECHNICAL Silicon -ning Order this document by 1N5446ARUD DATA Diodes 1N5446ARL 1N5448ARL 1N5456A,., These are epitmial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation

1N5443

Abstract: 1N5448
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NU M BER CAPACITANCE @ - 4 Vdc • 1 MHz pF TU N IN G RATIO C*2 V / C-30V MIN MAX M IN Q UALITY FACTOR Q @ - 4 Vdc f = 50 M Hz 1N5441 1N5442 6.8 8.2 2.5

1N5450A

Abstract: 1N5455A diode lt 429
Contextual Info: SILICON EPICAP DIODES 1N5441A, B . . . e pita xia l passivated a b ru p t ju n c tio n tu n in g d io d es d esigned fo r elec­ tro n ic tu n in g , FM, AFC and h a rm o n ic-g e n e ra tio n a p p lica tio n s in A M th ro u g h UHF ranges, p ro v id in g so lid -sta te re lia b ility to replace m echanical tu n in g

Contextual Info: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N 5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic-generation applications in AM through UHF ranges,

in547

Abstract: in5448 IN5446 IN5450 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466
Contextual Info: SÔE D TELEDYNE COMPONENTS ö T lT b O S HIG H Q Q U O tiL iS Ü ì @ • 1N5441 THRU S IL IC O N V A R A C T R O N 1N5476 V O L T A G E -V A R IA B L E C A P A C IT A N C E DIO D ES GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN5461-76 B A N D C

Contextual Info: 1N5444CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio2.6 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

Contextual Info: 1N5444C06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5446A asi TUNING VARACTOR DESCRIPTION: The 1N5446A is a Silicon Abrupt Junction Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 30 V Vr I' UF 100 m A If t P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

Contextual Info: 1N5444C18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5446A TUNING VARACTOR PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5446A is a Silicon Abrupt Junction Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS VR 30 V IF 100 mA PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters Min Max

varactor diode 1N5469

Abstract: 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449
Contextual Info: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 PART NUMBER CAPACITANCE @ 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451

Contextual Info: 1N54391N5476 1N5681 1N5710 Varactor Diodes 1N5439 to 1N5476 and 1N5681 to 1N5710 Type Number 1N5439 1N5440 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 A A A A A A A A A A A A A A A 1N5455 1N5456 1N5461

1N5449

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 1N5455 1N5456 ♦ 1N5461 ♦ 1N5462 ♦ 1N5463 ♦ 1N5464

1N5450A

Contextual Info: SILICON EPICAP DIODES 1N5441A, B . . . epitaxial passivated abrupt junction tuning diodes designed for elec­ tronic tuning, FM, AFC and harmonic-generation applications in AM through UHF ranges, providing solid-state reliability to replace mechanical tuning

Contextual Info: 1N5447A18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.350 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5444C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio2.6 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5444C12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p C1/C2 Min. Capacitance Ratio3.1 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.400 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References