1N5456 Search Results

1N5456A

Abstract: motorola 986 1N5446ARL 1N5448ARL
Contextual Info: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,

1N5441

Abstract: 1n5445a
Contextual Info: MOTOROLA SEM ICONDUCTOR 1N5441A,B thru 1N5456A,B TECHNICAL DATA vvc V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S S IL IC O N EPICAP 6.8 - 1 0 0 pF 30 V O L T S D IO D E S . . . epitaxial passivated abrupt junction tuning diodes designed for

transistor equivalent 2n5551

Abstract: bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods.

Contextual Info: 1N5456CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p‘ C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

IN5456A

Abstract: IN5456 IN5448A 1N5446ARL 1N5448ARL 1N5456A IN5446 A200 REACH in5448
Contextual Info: — MOTORO~ SEMICONDUCTOR o TECHNICAL Silicon -ning Order this document by 1N5446ARUD DATA Diodes 1N5446ARL 1N5448ARL 1N5456A,., These are epitmial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation

Contextual Info: 1N5456C12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5456C06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: INTERNATIONAL SEMICONDUCTOR INC. , 1N5439 thru VOLTAGE VARIABLE CAPACITORS 1N5456C HIGH Q, LOW VOLTAGE, GENERAL PURPOSE 3.9 TO 100 PF ELECTRICAL /• CHARACTERISTICS T* = 2 5 ftC u n le s s o th e r w is e s p e c ifie d CHARACTERISTICS TEST CONDITIONS ALL TYPES

Contextual Info: 1N5456C18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N54391N5476 1N5681 1N5710 Varactor Diodes 1N5439 to 1N5476 and 1N5681 to 1N5710 Type Number 1N5439 1N5440 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 A A A A A A A A A A A A A A A 1N5455 1N5456 1N5461

1N5449

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 1N5455 1N5456 ♦ 1N5461 ♦ 1N5462 ♦ 1N5463 ♦ 1N5464

IN5456

Abstract: KE-01 1N5456A 1N5456B 1N5456D 50MHZ N5456C KE01
Contextual Info: i- * _ •* KNOX SEMICONDUCTOR INC _ • * * » * ' 34E D • COMME R C I A L TEST S P E C I F I C A T I O N ncrutr'cr t v d c . I N 5456 1N5456A 1N5456B 1NS456C 1N5456D 10 100 100 100 100 PF PF PF' PF PF ■ SE3AS3M ODDOlbS *4 M K Z I " p C T H ^ + 20%

1n54j

Abstract: 1N5441 1N5461 1N5476 1n54j9 1N5440 1N5439 1N5442 1N5443 1N5444
Contextual Info: "F ¿7-/9 4TE D ^ooaaTö 00000^3 ö ?t • 1N5439 iseh In tern atio n al i n t e r n a tional Semiconductor, In c - thru semicond 1N5456 1N5461 thru H IG H Q - VOLTAGE VARIABLE CAPACITORS 1N5476 MINIMUM QUALITY TUNING RATIO a t V r = 4 Vdc FACTOR 2 V to 3 0 V

Contextual Info: 1N5456C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p‘ C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

1N5462

Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447

MV2215

Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
Contextual Info: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

A-29 diode

Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
Contextual Info: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and