SQ1214A Search Results

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

VB-39

Contextual Info: HE RME TI CAL L Y S EA L ED GLASS PACKAGED TU N IN G DIODES ABRUPT and HYPERABRUPT E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS Oiodt Cap C T I* î'1 0 % P 4 V / 1 M H/ Dr 04 9 SD M H i R A T IO

HA1120

Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
Contextual Info: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

IN5448A

Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
Contextual Info: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS

diod LT 741

Abstract: 1217A S0171 S0122 738s MVI40 0068AH
Contextual Info: m s n elect: ABRUPT - HYPERABRUPT Uh HERMETICALLY SEA LED G L A S S P A C K A G E D TUNING DIOD ES ELE C T R IC A L CHARACTERISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS TYPE R A T IO C2/C20 NO m m /ty p LOW INDUCTANCE FOR USE TO 2.5 6Hz

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted