1N5463A Search Results

Contextual Info: 1N5463A06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.550 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5463ACHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p‘ C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.550 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip

Contextual Info: 1N5463A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p‘ C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.550 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5463A12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.550 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: 1N5463A18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.10p C1/C2 Min. Capacitance Ratio2.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.550 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

IN5142

Abstract: IN5142A MVAM106 1N5472A MV104g Motorola 1N547 MVAM115 1N5470A 226AA TO226AA
Contextual Info: TUNING, HOT CARRIER, AND PIN DIODES Motorola’s RF diodes are designed for electronic tuning, mixing, and switching high frequency signals. These diodes are available in the hermetic D 0 -2 0 4 A A DO-7 and low cost TO-226AA (TO-92) packages. Tuning Diodes

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

A-29 diode

Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
Contextual Info: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5458 VOLTAGE VARIABLE CAPACITORS thru V E R Y HIGH Q, LOW VOLTAGE, LOW L EA K A G E 3.9 TO 100 PF 1N5476C ELECTRICAL CHARACTERISTICS f CHARACTERISTICS - ALL TYPES T„ = 25 °C unless otherwise specified

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

1N5139

Abstract: 1n4790a 1N5470A 1N5689A 1N5698A 1N5141 1N5143 1N5147 1N5697A 1N5699A
Contextual Info: C O M SEMICONDUCTOR INC 2TE D 177SM7D DDGObSS 1 B1C0DI V oltage-V ariable C a p a c ita n c e Timing D iodes CODI's voltage variable capacitor (W C ) product line is one of the broadest, h ig h -q u a lity lines in the industry. COOI offers W C s with low leakage, ultra - high Q, high reverse

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

1N4810

Abstract: 1N5470A 1N5140 1N5143 1N5145 1N5146 1N5696A 1N5698A 1N5699A 1N5700A
Contextual Info: C 0 D I SEMICONDUCTOR INC 2TE D B 1 7 7 5 M 7 G GDGGbSfl 1 B i C O D I T -0 7 -ll Voltage-Variable C apacitan ce Timing Diodes CODI's voltage variable capacitor (W C ) product line is one of the broadest, h ig h -q u a lity lines in the industry. COOI otters W C s with tow leakage, ultra - high Q, high reverse

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted