IN5468
Abstract: in547 IN5476 IN5475 IN5446 IN546 IN5451 IN5442 1N950 IN5472
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 Leakage Current >100 <10nA low Cost Comments <1.0M* Replaces M V 8 3 0 -M V 8 4 0 D O -7 G lass C V830CV840 X C V1006-16CV1106-16 X X C V 1 62 0CV1650
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100pfcv830-cv840mv830-mv84gcv1006-16-cv1106-16+16fv1006-16fv1106-16cv1620-cv1650mv1620-mv1650cv1652-cv1666mv1652-mv1666in5468in547in5476in5475in5446in546in5451in54421n950in5472
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1N5443
Abstract: 1N5448
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NU M BER CAPACITANCE @ - 4 Vdc • 1 MHz pF TU N IN G RATIO C*2 V / C-30V MIN MAX M IN Q UALITY FACTOR Q @ - 4 Vdc f = 50 M Hz 1N5441 1N5442 6.8 8.2 2.5
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1n54411n54761n54421n5443+51n54441n54451n54461n54471n5448
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in547
Abstract: in5448 IN5446 IN5450 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466
Contextual Info: SÔE D TELEDYNE COMPONENTS ö T lT b O S HIG H Q Q U O tiL iS Ü ì @ • 1N5441 THRU S IL IC O N V A R A C T R O N 1N5476 V O L T A G E -V A R IA B L E C A P A C IT A N C E DIO D ES GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN5461-76 B A N D C
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1n54411n5476in5461-76in5467+14in5448in5449in5469in5450in5470in5451in547in5446in5454in5461in5452in5444in5475in5466
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IN5462
Contextual Info: 3 CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 • HIGH Q ~ ÌN5441 THRU 1N5476 S IL IC O N V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E O IO D ES JA N AND JAN -TX V ER S IO N A V A ILA B LE IN5461-76 B AND C • Q @ - 4 V D C , 5 0 M Hz to 6 0 0
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IN5450
Abstract: IN5444 IN544 5lo300 IN5470 in5476
Contextual Info: FAI HO. ¡ ' S n 00000000000 - w - m f H IG H Q S IL IC O N V A R A C T R O N V O L T A G E ^ V A R !A B L E C A P A C IT A N C E D IO D E S GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN 546176 B A N D C > Q @ - 4 V t>C , 5 0 M H * to 6 0 0 • LOW LEAKAG E
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in5473in5474in547sin5476+5in5450in5444in5445lo300in5470
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IN5148
Abstract: IN5139 IN5476 IN5441A IN546 1n5441 1N5461 1N5462 IN5456A IN5461A
Contextual Info: ALPHA IND/ SEMI CONDUCTOR 4ÔE D • DSÛ5443 DDD1 3 DS b07 ■ ALP VHF-UHF Abrupt Tuning Diodes Features ■ ■ ■ ■ ■ ■ High Q Large Tuning Range Standard Capacitance Tolerances -1 0 % , 5%, 2% Computer Matched for Tracking optional Low Leakage Current
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ddd13dsmil-std-750in5461ain5476a+11in5441ain5456ain5139in51481n54531ns454in5476in5461n54411n54611n5462
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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IN5480
Abstract: 423PD10AE1 IN1733 IN548 IN5482 425SH6AB1 IN5484 IN1730 IN5478 NKV20F
Contextual Info: 2323489 CONDITIONING SEMICOND DVC f* r :• a , f t -, vK .r " - r . Type No. z Q 5 o Q o f I v" ± £- " i * -V.V -V _ ; :> V f? p f Max. Peak forward Voltage Vfm 40 40 40 40 40 40 0.070 0:042 0.021 0.017 0.014 0.007 3 3 2 2 2 1 0.01 0.01 0.01. 0.01 0.01
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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in2222atransitron catalogtcr43tm106+6in4431n9448sv4091in4868 diode3n68in536
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4l30524l3056wiring diagram audio amplifier ic 6283germanium+8transistor shortform datasheet & cross referenceshalbleiter index transistor2n5160 motorolatransistor itt 29071n51592n 5574inverter welder 4 schematicdiagrams de ic lg 8838
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DIODE 1N54
Abstract: IN5476A IN5140 IN5472A INS139 IN5148 IN6144 in647 IN5469A IN5441A
Contextual Info: LÔRAL/FREâUENCY/SENICOND E^ D • 557^51 7 *^ Û ? - / ? □□□OflDfl fl ■ JEDEC TUNING VARACTORS JEDEC REGISTERED FEATURES 1N 5139 , A through 1N 5148, A 1N 5441, A , B, C through 1N 5456, A , B, C 1N 54 6 1 , A , B, C through 1N 5476, A , B, C DO-7 Glass Package
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1n51391n51481n54411n5456+151n54611n5476c4/c60f-60mhz1n547diode 1n54in5476ain5140in5472ains139in5148in6144in647in5469ain5441a
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300in53882n5161germanium+64m28germanium drift transistor2n50701ns2482n5271inverter welder 4 schematic
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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