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    GT60M Search Results

    GT60M Datasheets (31)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GT60M101
    		Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT60M101
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 53.63KB 1
    GT60M102
    		Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT60M102
    		Unknown Catalog Scans - Shortform Datasheet Scan PDF 53.63KB 1
    GT60M102
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.73KB 1
    GT60M103
    		Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT60M103
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.73KB 1
    GT60M104
    		Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT60M104
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.73KB 1
    GT60M104
    		Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Scan PDF 268.25KB 5
    GT60M104
    		Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF 253.25KB 4
    GT60M104
    		Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) Scan PDF 255.05KB 4
    GT60M301
    		Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT60M301
    		Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF 301.49KB 6
    GT60M301
    		Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) Scan PDF 294.84KB 5
    GT60M301
    		Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Scan PDF 301.5KB 6
    GT60M302
    		Toshiba Discrete IGBTs Original PDF 586.27KB 15
    GT60M302
    		Toshiba Insulated Gate Bipolar Transistor Silicon N Channel MOS Type Scan PDF 278.07KB 5
    GT60M302
    		Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) Scan PDF 283.9KB 6
    GT60M303
    		Toshiba Discrete IGBTs Original PDF 539.84KB 16
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    GT60M Price and Stock

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    Acopian Power Supplies VB48GT60M

    AC/DC CONVERTER
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    DigiKey VB48GT60M Bulk 1
    • 1 $427.35
    • 10 $416.85
    • 100 $411.60
    • 1000 $411.60
    • 10000 $411.60
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    Acopian Power Supplies VB35GT60M

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    DigiKey VB35GT60M Bulk 1
    • 1 $352.28
    • 10 $341.77
    • 100 $336.52
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    Acopian Power Supplies VB35GT60M-230

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    DigiKey VB35GT60M-230 Bulk 1
    • 1 $378.52
    • 10 $368.02
    • 100 $362.78
    • 1000 $362.78
    • 10000 $362.78
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    Acopian Power Supplies VB48GT60M-230

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    DigiKey VB48GT60M-230 Bulk 1
    • 1 $453.60
    • 10 $443.10
    • 100 $437.85
    • 1000 $437.85
    • 10000 $437.85
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    Toshiba America Electronic Components GT60M322(Q)

    60A, 950V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components GT60M322(Q) 47
    • 1 $19.50
    • 10 $19.50
    • 100 $18.75
    • 1000 $18.75
    • 10000 $18.75
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    GT60M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT60M101

    Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0


    OCR Scan     		GT60M101 --15V GT60M101 PDF

    GT60M303

    Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.


    OCR Scan     		GT60M303 25//s GT60M303 PDF

    Contextual Info: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.


    OCR Scan     		GT60M301 PDF

    GT60M302

    Abstract: P channel 600v 20a IGBT
    Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)


    OCR Scan     		GT60M302 GT60M302 P channel 600v 20a IGBT PDF

    Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD


    OCR Scan     		GT60M303 25//s PDF

    GT60M323

    Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    GT60M303

    Abstract: GT60M303 application GT60M303 circuit
    Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		GT60M303 GT60M303 GT60M303 application GT60M303 circuit PDF

    GT60M301

    Abstract: 20A igbt
    Contextual Info: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.


    OCR Scan     		GT60M301 GT60M301 20A igbt PDF

    GT60M303 application

    Abstract: GT60M303
    Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		GT60M303 GT60M303 application GT60M303 PDF

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		GT60M303 GT60M303 application GT60M303 circuit igbt failure rate PDF

    GT60M322

    Contextual Info: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A)


    Original     		GT60M322 GT60M322 PDF

    Contextual Info: GT60M104 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4//s Max. Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 PDF

    transistor fc 1013

    Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •


    OCR Scan     		GT60M302 transistor fc 1013 PDF

    S5J12

    Abstract: IC60N gt60m104
    Contextual Info: SILICON N CHANNEL MOS TYPE GT60M104 U n i t in n m HIGH POWER SWITCHING APPLICATIONS. 0 3 .3 ± 0 .2 2 0 .5 MAX . H i g h Inp u t I m p e d a n c e . High Speed : tf=0.4us Max„ . Low Saturation Voltage : Vc£(s a t)*3.7V(Max.) • H ^ L «12 M ■ . Enhancement-Mode


    OCR Scan     		GT60M104 S5J12 S5J12 IC60N gt60m104 PDF

    GT60M323

    Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector


    Original     		GT60M323 120HIBA GT60M323 PDF

    GT60M323

    Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed • • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector


    Original     		GT60M323 GT60M323 PDF

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303 PDF

    GT60M301

    Abstract: HEI100
    Contextual Info: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed :GBT tf= 0.25¿¿s Typ.


    OCR Scan     		GT60M301 GT60M301 HEI100 PDF

    GT60M322

    Contextual Info: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Unit: mm Enhancement mode type High speed : tf = 0.15 s typ. (IC = 60 A)


    Original     		GT60M322 GT60M322 PDF

    GT60M301

    Contextual Info: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT6QM3Q1 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.25,«s Typ.


    OCR Scan     		GT60M301 GT60M301 PDF

    VQE 22

    Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
    Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • • The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq b T : tf=0.25/*s TYP.


    OCR Scan     		GT60M303 VQE 22 sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M PDF

    GT60M101

    Abstract: X10V
    Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE GT60M101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX . 0 3 .3 ± 0 .2 . High Input Impedance . High Speed : tf = 0. l\is Max. . Low Saturation Voltage : VCE(sat) • OV(Max.) . Enhancement-Mode


    OCR Scan     		GT60M101 GT60M101 X10V PDF

    GT8G101

    Abstract: 2BLC 27F2C 2-21F2C GT60M302
    Contextual Info: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode


    OCR Scan     		GT60M302 GT8G101 GT8G101 2BLC 27F2C 2-21F2C GT60M302 PDF

    Contextual Info: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Unit: mm Enhancement mode type High speed : tf = 0.15 µs typ. (IC = 60 A)


    Original     		GT60M322 PDF