GT20D101 Search Results

transistor d 4515

Abstract: Transistor 4515 2-21F1C GT20D101
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201

T20D201

Abstract: gt20d201
Contextual Info: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101

Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : |Y fe|= 10S(Typ.)

GT20D101

Contextual Info: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5

IGBT gt20d201

Contextual Info: SILICON N CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage VCES=-250V MIN. . High Forward Transfer Admittance I Yfe I =10S (TYP.) 20.5M A X ¿ 3 .3 ± 0 .2 . Complementary to GT20D101 . Enhancement-Mode 2.5 3.0 + 2.5

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 03.3±O .2 2 0.5M A X • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe | = 10S(Typ.)

toshiba gt20d101

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL G T 2 0 D 1 01 DATA SILICON N CHANNEL TYPE GT20D101 Unit in mm HIGH POWER AMPLIFIER APPLICATION. 20.5MAX • • • • High Breakdown Voltage : VCES —250V (Min.) High Forward Transfer Admittance : |Yfe|= 10S(Typ.)

IGBT gt20d201

Abstract: p channel igbt GT20D201
Contextual Info: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101

Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 0d.S±O.2 2 0.5M A X • High Breakdown Voltage : V C E S ~ 250V Min. • High Forward Transfer Admittance : |Yfe| = 10S(Typ.)

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

GT20D201

Abstract: toshiba gt20d201 GT20 GT20D101
Contextual Info: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101 •

GT200101

Abstract: GT20D101 GT20D201 toshiba gt20d101 TOS-M
Contextual Info: 45E D m TOSM T 0 T 7 5 5 G 0017äMfl T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSH IB A D I S C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v . High Forward Transfer Admittance

GT20D101

Contextual Info: 45E D m T0T755G 0017äMfl TOSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSHIBA D I S C R E T E / O P T O H IG H P O W E R A M P L I F I E R A P P L I C A T I O N Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v

gt20d201

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE P T ^ n n ^ fM GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm [Si : VcES=~250V MIN. . Complementary to GT20D101 ) oin esi < <1 1 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) 5 .4 5 ± 0 .1 5

Toshiba gt20d101

Abstract: GT20D101 GT20D201
Contextual Info: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)

toshiba gt20d101

Abstract: GT20D101 GT20D201
Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)

TOSH18A

Contextual Info: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ. Complementary to GT20D201

Contextual Info: 45E D • TDT7E50 0017fl4fl I T OSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N C H A N N EL T Y P E TOSHIBA T DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 03 : V c e s =250V (MIN.) 3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.)

Contextual Info: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D101

Contextual Info: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe|= 10S(Typ.) Complementary to GT20D201

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

Contextual Info: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)