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T20D201 Abstract: gt20d201 Contextual Info: TOSHIBA T20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101	OCR Scan	GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201	PDF

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T20D201

Abstract: gt20d201
Contextual Info: TOSHIBA T20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101

OCR Scan

GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201

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