GT20 Search Results

Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •

Contextual Info: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive

transistor d 4515

Abstract: Transistor 4515 2-21F1C GT20D101
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201

T20D201

Abstract: gt20d201
Contextual Info: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101

Contextual Info: GT20J311 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V qe (sat) = 2-7V (Max.)

GT20G101

Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode

Contextual Info: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)

Contextual Info: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive

Contextual Info: GT20J311 TOSHIBA TENTATIVE TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT20J311 HIGH P O W ER SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : t f = 0.30/iS Max. Low Saturation Voltage : V q e ( s a t ) = 2.7V (Max.)

GT20J311

Contextual Info: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

transistor equivalent 20j321

Abstract: gt20j321 equivalent 20j321 gt20j321 20j32
Contextual Info: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)

1.5 128x128 CSTN LCD

Abstract: tft 128x128 1.6 TL0350 i8080 TL0350F1 128x128 Transflective LCD LCD 128x128 GT2016 M6800 1.5 128x128 Color LCD
Contextual Info: JEWEL HILL ELECTRONIC CO.,LTD. JEWEL HILL ELECTRONIC CO.,LTD. SPECIFICATIONS FOR LCD MODULE GT2016 Module No. Office Address: Rm. 518,5/F., 101 Shangbu Industrial District, HuaqiangNorthRoad, Shenzhen, China TEL : 86 -755-83362489 83617492 FAX: (86)-755-83286396

GT20G101

Contextual Info: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT20J101

Abstract: GT20J301
Contextual Info: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)

88E1116

Abstract: nvidia nforce4 dme1737 nvidia temperature 88E1116-CAA am2 pin temperature socket 940 am2 pin AM2 socket nForce4 B2925
Contextual Info: www.tyan.com Versatile 1U Server Platform Transport GT20 B2925G20V4H Entry 1U Server Platform with AMD Opteron 1000 Socket AM2 Front View(B2925G20V4H) ● Support one AMD Opteron 1000 series processor (AM2 socket) ● Nvidia nForce Pro 3400 ● Four (4) DDR2 DIMMs, supporting max.8GB unbuffered, ECC/non-ECC

Contextual Info: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D10i

cs7e

Contextual Info: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode •

Contextual Info: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : |Y fe|= 10S(Typ.)

transistor equivalent 20j321

Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
Contextual Info: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)

GT20J121

Abstract: gt20j1
Contextual Info: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.

Contextual Info: GT20J301 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V c e (sat) = 2-^^ (Max.)

GT20D101

Contextual Info: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5

GT20J301

Contextual Info: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage