transistor equivalent 20j321
Abstract: gt20j321 equivalent 20j321 gt20j321 20j32
Contextual Info: 20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 20J321 High Power Switching Applications Fast Switching Applications • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT20J321
transistor equivalent 20j321
gt20j321 equivalent
20j321
gt20j321
20j32
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transistor equivalent 20j321
Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
Contextual Info: 20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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Original
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GT20J321
transistor equivalent 20j321
20J321
gt20j321 equivalent
GT20J321
20j32
TOSHIBA IGBT DATA BOOK
2-10R1C
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PDF
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20J321
Abstract: transistor equivalent 20j321 GT20J321 2-10R1C gt20j321 equivalent
Contextual Info: 20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 20J321 High Power Switching Applications Fast Switching Applications • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)
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Original
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GT20J321
20J321
transistor equivalent 20j321
GT20J321
2-10R1C
gt20j321 equivalent
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PDF
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