GT2QD201 Search Results

Contextual Info: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D10i

Contextual Info: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)