GT50J1 Search Results

GT50J1 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet

GT50J1 Datasheets (16)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GT50J101	Toshiba	Discrete IGBTs	Original	PDF	586.27KB	15
GT50J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	53.63KB	1
GT50J101	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	55.62KB	1
GT50J101	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	88.73KB	1
GT50J101	Toshiba	TRANSISTOR IGBT 50A 600V	Scan	PDF	224.23KB	3
GT50J102	Toshiba	Discrete IGBTs	Original	PDF	586.27KB	15
GT50J102	Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)	Original	PDF	388.38KB	6
GT50J102	Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16
GT50J102	Toshiba	Insulated Gate Bipolar Transistor Silicon N-Channel IGBT	Scan	PDF	256.03KB	5
GT50J121	Toshiba		Original	PDF	322.84KB	6
GT50J121	Toshiba	High-Speed IGBTs	Original	PDF	117.47KB	8
GT50J121	Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16
GT50J121	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Original	PDF	206.22KB	6
GT50J121(Q)	Toshiba	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 240W TO3P LH	Original	PDF		6

GT50J122	Toshiba	N-channel IGBT	Original	PDF	177.28KB	6
GT50J122	Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16

GT50J1 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components GT50J123,STA1E(S Halbleiterbauelemente, Transistor, Discr; \|Toshiba GT50J123,STA1E(S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GT50J123,STA1E(S	Bulk			1	1 $4.26 10 $3.60 100 $2.31 1000 $2.16 10000 $2.16	Buy Now

GT50J1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GT50J102 Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.	OCR Scan	gt50j102 961001eaa	PDF
gt50j Contextual Info: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2	OCR Scan	gt50j102 2-21f2c gt50j	PDF
Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	gt50j121	PDF
GT50J121 Abstract: GT50J325 Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	gt50j121 gt50j325	PDF
GT50J121 Abstract: GT50J325 Contextual Info: GT50J121 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT50J121 ○ 大電力スイッチング用 ○ 高速スイッチング用単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ	Original	gt50j121 2-21f2c 20070701-ja gt50j325	PDF
GT50J101 Contextual Info: GT50J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm . High Input Impedance : tf=0.35ns Max. io -6 . . P •» < = i —r _\| sl = . Low Saturation Voltage : VcE(sat)=4 .0V(Max.) ) 2.50 . Enhancement-Mode j L 'i i l 3.0 +2.5 1.0-0 .2 5 I'.AXIMUM RATINGS (Ta=25°C)	OCR Scan	gt50j101	PDF
GT50J101 Abstract: CP100 Contextual Info: GT50J101 HIGH POWER S W I T C H I N G A P P L I C A T I O N S . Unit 20.5MAX High Input I m p e d an ce High Speed tf=0. 35/is Max. Low S a t u r a t i o n Vo lt a g e v C E ( s a t ) = 4 .0 V ( M a x .) in m m 0 3.3 ±0.2 Enhancement-Mode 2.5 3.0 MAXI MUM R A T I N G S	OCR Scan	gt50j101 35/is cp100	PDF
Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	gt50j122 2-16c1chiba	PDF
GT50J122 Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	gt50j122	PDF
gt50j102 Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)	Original	gt50j102	PDF
Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf=0.30/¿s Max.	OCR Scan	gt50j102	PDF
gt50j102 Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd. Generation. l Enhancement−Mode. l High Speed. : tf = 0.30µs Max. l Low Saturation Voltage.	Original	gt50j102	PDF
Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	gt50j122	PDF
gt50j102 Abstract: failure report IGBT Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30µs Max. z Low saturation voltage.	Original	gt50j102 2-21f2c failure report igbt	PDF

MG150N2YS40 Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40 Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11	OCR Scan	t8j101 t8j102 t15j101 t15j102 +16gt15j103 t25j101 mg25j1bs11 t50j101 t60j101 80j101 mg150n2ys40 mg100j2ys45 mg75j2ys40 mg150j2ys40 mg15n6es42 mg100g2ys1 mg75n2ys40 mg25n2ys40 mg200j2ys40 mg50j6es40	PDF
25-CJ Contextual Info: GT50J102 SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. H ighspeed. : tf=0.3 Vs (Max. Low Saturation Voltage. : VcE(sat) = 2.7V (Max.) M A X IM U M RATINGS (Ta = 25°CJ	OCR Scan	gt50j102 2-21f2c 25-cj	PDF
gt50j102 Abstract: 2-21f2c Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)	Original	gt50j102 2-21f2c	PDF
Contextual Info: TOSHIBA Preliminary GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT50J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)	Original	gt50j121 50khz tj125	PDF
Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30µs Max. Low saturation voltage. : VCE(sat) = 2.7V (Max.)	Original	gt50j102 2-21f2c	PDF
Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	gt50j121	PDF
GT50J121 Abstract: GT50J325 igbt transistor Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	gt50j121 gt50j325 igbt transistor	PDF
2-21F2C Abstract: GT50J102 Contextual Info: GT50J102 東芝伝導度変調形電界効果トランジスタシリコンNチャネルIGBT GT50J102 ○ 大電力スイッチング用 ○ モータドライブ用単位: mm z 取扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf = 0.30 s 最大 (IC = 50A)	Original	gt50j102 2-21f2c 20070701-ja	PDF
GT50J102 Abstract: toshiba code igbt Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30 s Max. z Low saturation voltage.	Original	gt50j102 toshiba code igbt	PDF
GT50J121 Abstract: GT50J325 Contextual Info: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	gt50j121 gt50j325	PDF

GT50J1 Search Results

GT50J1 Result Highlights (1)

GT50J1 Datasheets (16)

GT50J1 Price and Stock

Toshiba America Electronic Components GT50J123,STA1E(S

GT50J1 Datasheets Context Search

GT50J102

gt50j

GT50J121

GT50J121

GT50J101

GT50J101

GT50J122

gt50j102

gt50j102

gt50j102

MG150N2YS40

25-CJ

gt50j102

GT50J121

2-21F2C

GT50J102

GT50J121